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Lang Zeng
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2020 – today
- 2024
- [j9]Kaili Zhang, Zhongzhen Tong, Xinxin Liang, Chengzhi Wang, You Wang, Yue Zhang, Weisheng Zhao, Lang Zeng, Deming Zhang:
A Charge-Domain Compute-In-Memory Macro With Cell-Embedded DA Conversion and Two-Stage AD Conversion for Bit-Scalable MAC Operation. IEEE Trans. Circuits Syst. II Express Briefs 71(3): 1077-1081 (2024) - [j8]Zhipeng Guo, Deming Zhang, Kaili Zhang, Mingyang Song, Yue Zhang, Lang Zeng:
A Novel Search-Based Compute-in-Memory Minimum Values Generation Scheme for Low-Complexity LDPC Min-Sum Decoding. IEEE Trans. Circuits Syst. II Express Briefs 71(7): 3498-3502 (2024) - [c17]Zirui Wang, Haoran Wang, Yuxiao Wang, Zixuan Sun, Lang Zeng, Runsheng Wang, Ru Huang:
New Insights into the Random Telegraph Noise (RTN) in FinFETs at Cryogenic Temperature. IRPS 2024: 6 - [i3]Lang Zeng, Weijing Tang, Zhao Ren, Ying Ding:
Optimizing Cox Models with Stochastic Gradient Descent: Theoretical Foundations and Practical Guidances. CoRR abs/2408.02839 (2024) - 2023
- [j7]Lang Zeng, Ming Tang, Ying Liu:
The impacts of the individual activity and attractiveness correlation on spreading dynamics in time-varying networks. Commun. Nonlinear Sci. Numer. Simul. 122: 107233 (2023) - [j6]Kaili Zhang, Deming Zhang, Mingyang Song, Zhipeng Guo, You Wang, Chengzhi Wang, Yue Zhang, Lang Zeng:
A Novel 9T1C-SRAM Compute-In-Memory Macro With Count-Less Pulse-Width Modulation Input and ADC-Less Charge-Integration-Count Output. IEEE Trans. Circuits Syst. I Regul. Pap. 70(10): 3944-3953 (2023) - [i2]Lang Zeng, Jipeng Zhang, Wei Chen, Ying Ding:
Dynamic Prediction using Time-Dependent Cox Survival Neural Network. CoRR abs/2307.05881 (2023) - 2021
- [j5]Zhitai Yu, Yijiao Wang, Zeqing Zhang, Kuiqing He, Lang Zeng, Zhaohao Wang, Weisheng Zhao:
Proposal of High Density Two-Bits-Cell Based NAND-Like Magnetic Random Access Memory. IEEE Trans. Circuits Syst. II Express Briefs 68(5): 1665-1669 (2021) - [c16]Deming Zhang, Xian Wang, Kaili Zhang, Lang Zeng, You Wang, Bi Wang, Erya Deng, Chuanjie Wang, Peng Wu, Youguang Zhang, Weisheng Zhao:
Fully Single Event Double Node Upset Tolerant Design for Magnetic Random Access Memory. ISCAS 2021: 1-5 - 2020
- [j4]Kaili Zhang, Deming Zhang, Chengzhi Wang, Lang Zeng, You Wang, Weisheng Zhao:
Compact Modeling and Analysis of Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction. IEEE Access 8: 50792-50800 (2020) - [j3]Chengzhi Wang, Deming Zhang, Lang Zeng, Weisheng Zhao:
Design of Magnetic Non-Volatile TCAM With Priority-Decision in Memory Technology for High Speed, Low Power, and High Reliability. IEEE Trans. Circuits Syst. I Regul. Pap. 67-I(2): 464-474 (2020) - [c15]Kaili Zhang, Deming Zhang, Chengzhi Wang, Lang Zeng, Weisheng Zhao:
Voltage-Gated Spin-Hall Effect Based Magnetic Non-Volatile Flip-Flop for High Speed, Low Power and Compact Cell Area. ISCAS 2020: 1-5
2010 – 2019
- 2019
- [j2]Chengzhi Wang, Deming Zhang, Lang Zeng, Erya Deng, Jie Chen, Weisheng Zhao:
A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation. IEEE Trans. Circuits Syst. I Regul. Pap. 66-I(4): 1454-1464 (2019) - [c14]Lang Zeng, Zuodong Zhang, Haoxuan Chen, Tianqi Gao, Deming Zhang, Mingzhi Long, Youguang Zhang, Weisheng Zhao:
Modulation and Demodulation of Digital Frequency Shift Keying System Based on Spin Torque Nano Oscillator with Voltage Controlled Magnetic Anisotropy Effect. ISCAS 2019: 1-5 - [c13]Chengzhi Wang, Deming Zhang, Lang Zeng, Kaili Zhang, Youguang Zhang, Weisheng Zhao:
Low-Power, High-Speed and High-Density Magnetic Non-Volatile SRAM Design with Voltage-Gated Spin-Orbit Torque. NANOARCH 2019: 1-6 - 2018
- [c12]Chengzhi Wang, Deming Zhang, Lang Zeng, Jie Chen, Weisheng Zhao:
A Novel 15T-4MTJ based Non-volatile Ternary Content-Addressable Memory Cell for High-Speed, Low-Power and High-Reliable Search Operation. APCCAS 2018: 431-434 - [c11]Deming Zhang, Yanchun Hou, Chengzhi Wang, Jie Chen, Lang Zeng, Weisheng Zhao:
Hardware Acceleration Implementation of Sparse Coding Algorithm with Spintronic Devices. NANOARCH 2018: 79-85 - 2017
- [c10]Jiaqi Wei, Liang Chang, Zhaohao Wang, Xiaoyang Lin, Kaihua Cao, Hushan Cui, Wang Kang, Haoxuan Chen, Lang Zeng, Youguang Zhang, Chao Zhao, Weisheng Zhao:
Ultrafast spintronic integrated circuits. ASICON 2017: 1021-1024 - [c9]Xiaowan Qin, Lang Zeng, Tianqi Gao, Deming Zhang, Mingzhi Long, Youguang Zhang, Weisheng Zhao:
Proposal for novel magnetic memory device with spin momentum locking materials. NANOARCH 2017: 45-46 - [c8]Zuodong Zhang, Lang Zeng, Tianqi Gao, Deming Zhang, Xiaowan Qin, Mingzhi Long, Youguang Zhang, Haiming Yu, Weisheng Zhao:
Frequency modulation of spin torque nano oscillator with voltage controlled magnetic anisotropy effect. NANOARCH 2017: 47-48 - [c7]Guanda Wang, Yue Zhang, Zhizhong Zhang, Jiang Nan, Zhenyi Zheng, Yu Wang, Lang Zeng, Youguang Zhang, Weisheng Zhao:
Compact modeling of high spin transfer torque efficiency double-barrier magnetic tunnel junction. NANOARCH 2017: 49-54 - 2016
- [j1]Deming Zhang, Lang Zeng, Kaihua Cao, Mengxing Wang, Shouzhong Peng, Yue Zhang, Youguang Zhang, Jacques-Olivier Klein, Yu Wang, Weisheng Zhao:
All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron. IEEE Trans. Biomed. Circuits Syst. 10(4): 828-836 (2016) - [c6]Lang Zeng, Deming Zhang, Youguang Zhang, Fanghui Gong, Tianqi Gao, Sa Tu, Haiming Yu, Weisheng Zhao:
Spin wave based synapse and neuron for ultra low power neuromorphic computation system. ISCAS 2016: 918-921 - [c5]Deming Zhang, Lang Zeng, Youguang Zhang, Weisheng Zhao, Jacques-Olivier Klein:
Stochastic spintronic device based synapses and spiking neurons for neuromorphic computation. NANOARCH 2016: 173-178 - 2015
- [c4]Deming Zhang, Lang Zeng, Yuanzhuo Qu, Youguang Zhang, Mengxing Wang, Weisheng Zhao, Tianqi Tang, Yu Wang:
Energy-efficient neuromorphic computation based on compound spin synapse with stochastic learning. ISCAS 2015: 1538-1541 - [c3]Liuyang Zhang, Wang Kang, Youguang Zhang, Yuanqing Cheng, Lang Zeng, Jacques-Olivier Klein, Weisheng Zhao:
Channel Modeling and Reliability Enhancement Design Techniques for STT-MRAM. ISVLSI 2015: 461-466 - [c2]Deming Zhang, Lang Zeng, Fanghui Gong, Tianqi Gao, Shaolong Gao, Youguang Zhang, Weisheng Zhao:
Realization of neural coding by stochastic switching of magnetic tunnel junction. NVMTS 2015: 1-4 - [i1]Robert Andrawis, José David Bermeo, James Charles, Jianbin Fang, Jim Fonseca, Yu He, Gerhard Klimeck, Zhengping Jiang, Tillmann Kubis, Daniel F. Mejia, Daniel Lemus, Michael Povolotskyi, Santiago Alonso Pérez-Rubiano, Prasad Sarangapani, Lang Zeng:
NEMO5: Achieving High-end Internode Communication for Performance Projection Beyond Moore's Law. CoRR abs/1510.04686 (2015) - 2014
- [c1]Pengying Chang, Lang Zeng, Xiaoyan Liu, Gang Du:
Hole mobility in InSb-based devices: Dependency on surface orientation, body thickness and strain. ESSDERC 2014: 122-125
Coauthor Index
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last updated on 2024-10-25 21:15 CEST by the dblp team
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