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Renan Alves Fonseca
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2010 – 2019
- 2012
- [j1]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM at Different Technology Nodes. J. Electron. Test. 28(3): 317-329 (2012) - 2011
- [c6]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel
, Nabil Badereddine:
On using address scrambling to implement defect tolerance in SRAMs. ITC 2011: 1-8 - 2010
- [c5]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
A statistical simulation method for reliability analysis of SRAM core-cells. DAC 2010: 853-856 - [c4]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Impact of Resistive-Bridging Defects in SRAM Core-Cell. DELTA 2010: 265-269 - [c3]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. ETS 2010: 132-137 - [c2]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Setting test conditions for improving SRAM reliability. ETS 2010: 257 - [c1]Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Detecting NBTI induced failures in SRAM core-cells. VTS 2010: 75-80
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