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"Analysis of resistive-bridging defects in SRAM core-cells: A comparative ..."

Renan Alves Fonseca et al. (2010)

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DOI: 10.1109/ETSYM.2010.5512768

access: closed

type: Conference or Workshop Paper

metadata version: 2020-04-28

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  - conf/ets/FonsecaDBGPVB10
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Renan Alves Fonseca, Luigi Dilillo, Alberto Bosio, Patrick Girard, Serge Pravossoudovitch, Arnaud Virazel, Nabil Badereddine:
Analysis of resistive-bridging defects in SRAM core-cells: A comparative study from 90nm down to 40nm technology nodes. ETS 2010: 132-137

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