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2020 – today
- 2020
[j2]Zuodong Zhang
, Runsheng Wang, Zhe Zhang, Yawen Zhang, Shaofeng Guo, Ru Huang:
Circuit Reliability Comparison Between Stochastic Computing and Binary Computing. IEEE Trans. Circuits Syst. 67-II(12): 3342-3346 (2020)
2010 – 2019
- 2019
- [c6]Runsheng Wang, Zhe Zhang, Shaofeng Guo, Qingxue Wang, Dehuang Wu, Joddy Wang, Ru Huang:
OMI/TMI-based Modeling and Fast Simulation of Random Telegraph Noise (RTN) in Advanced Logic Devices and Circuits. ASICON 2019: 1-4 - 2018
- [j1]Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81: 101-111 (2018) - [c5]Che-Lun Hsu, Shaofeng Guo, Yibo Lin, Xiaoqing Xu, Meng Li, Runsheng Wang, Ru Huang, David Z. Pan:
Layout-dependent aging mitigation for critical path timing. ASP-DAC 2018: 153-158 - [c4]Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Zexuan Zhang, Zhe Zhang, Yangyuan Wang, Ru Huang:
Investigation on the amplitude coupling effect of random telegraph noise (RTN) in nanoscale FinFETs. IRPS 2018: 6-1 - [c3]Shaofeng Guo, Zhenghan Lin, Runsheng Wang, Dongyuan Mao, Yangyuan Wang, Ru Huang:
Evaluation of SRAM Vmin shift induced by random telegraph noise (RTN): physical understanding and prediction method. ISCAS 2018: 1-4 - 2017
- [c2]Runsheng Wang, Xiaobo Jiang, Shaofeng Guo, Ru Huang:
How close to the CMOS voltage scaling limit for FinFET technology? - Near-threshold computing and stochastic computing. ASICON 2017: 56-59 - [c1]Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang:
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD 2017: 780-785
Coauthor Index
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