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Pengpeng Ren
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2020 – today
- 2024
- [j6]Pengpeng Ren, Yongkang Xue, Linglin Jing, Lining Zhang, Runsheng Wang, Zhigang Ji:
A strong physical unclonable function with machine learning immunity for Internet of Things application. Sci. China Inf. Sci. 67(1) (2024) - [j5]Jinfeng Ye
, Pengpeng Ren
, Yongkang Xue
, Hui Fang
, Zhigang Ji
:
Fast Aging-Aware Timing Analysis Framework With Temporal-Spatial Graph Neural Network. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 43(6): 1862-1871 (2024) - [j4]Hai-Bao Chen
, Xinjie Zhang
, Wenjie Zhu, Jie Chen
, Pengpeng Ren
, Zhigang Ji
, Junhua Liu
, Runsheng Wang
, Ru Huang:
DRGA-Based Second-Order Block Arnoldi Method for Model Order Reduction of MIMO RCS Circuits. IEEE Trans. Circuits Syst. I Regul. Pap. 71(5): 2410-2423 (2024) - [c18]Dinghao Chen, Wenjie Zhu, Xiaoman Yang, Pengpeng Ren, Zhigang Ji, Hai-Bao Chen:
Physics-Informed Learning for EPG-Based TDDB Assessment. ASPDAC 2024: 651-656 - [c17]Shuying Wang, Yewei Zhang, Yunjoong Kim, Pengpeng Ren, Zhigang Ji:
A Thermal Profile Prediction Methodology for Nanosheet Circuits Featuring Cross-Layer Thermal Coupling Effect. IRPS 2024: 1-6 - [c16]Shiyu Xia, Longda Zhou, Kewei Wang, Xiaobin Fan, Yongkang Xue, Qi Shan, Hannian Wang, Pengpeng Ren, Zhigang Ji, Ru Huang:
Convolution-Based Vth Shift Prediction and the New 9T2C Pixel Circuit in LTPS TFT AMOLED. IRPS 2024: 1-7 - [c15]Yongkang Xue, Miaojia Yuan, Yu Li, Da Wang, Maokun Wu, Pengpeng Ren, Lining Zhang, Runsheng Wang, Zhigang Ji, Ru Huang:
Investigation of Positive Bias Temperature Instability in advanced FinFET nodes. IRPS 2024: 1-5 - [c14]Longda Zhou
, Jie Li, Pengpeng Ren, Sheng Ye, Da Wang, Zheng Qiao, Zhigang Ji:
Understanding the Physical Mechanism of RowPress at the Device-Level in Sub-20 nm DRAM. IRPS 2024: 1-6 - [c13]Da Wang
, Yongkang Xue, Yong Liu, Pengpeng Ren, Zixuan Sun, Zirui Wang, Yueyang Liu, Zhijun Cheng, Haiyang Yang, Xiangli Liu, Blacksmith Wu, Kanyu Cao, Runsheng Wang, Zhigang Ji, Ru Huang:
Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification. IRPS 2024: 9 - [c12]Zixuan Sun, Yongkang Xue, Haoran Lu, Pengpeng Ren, Zirui Wang, Zhigang Ji, Runsheng Wang, Ru Huang:
Investigation of Interplays between Body Biasing and Hot Carrier Degradation (HCD) in Advanced NMOS FinFETs. IRPS 2024: 72 - [c11]Yu Xiao, Chenyang Zhang, Da Wang, Yongkang Xue, Pengpeng Ren, Zhigang Ji:
A New Method of Automatic Extraction of RTN and OMI-Friendly Implementation. IRPS 2024: 75 - 2023
- [j3]Xiang Liu, Pengpeng Ren, Hai-Bao Chen
, Zhigang Ji
, Junhua Liu
, Runsheng Wang
, Jianfu Zhang
, Ru Huang:
Equiprobability-Based Local Response Surface Method for High-Sigma Yield Estimation With Both High Accuracy and Efficiency. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(4): 1346-1350 (2023) - [c10]Yishan Wu, Puyang Cai, Zhiwei Liu, Pengpeng Ren, Zhigang Ji:
Towards the understanding of ferroelectric-intrinsic variability and reliability issues on MCAM. IRPS 2023: 1-6 - [c9]Longda Zhou
, Jie Li, Zheng Qiao, Pengpeng Ren, Zixuan Sun, Jianping Wang, Blacksmith Wu, Zhigang Ji, Runsheng Wang, Kanyu Cao, Ru Huang:
Double-sided Row Hammer Effect in Sub-20 nm DRAM: Physical Mechanism, Key Features and Mitigation. IRPS 2023: 1-10 - [c8]Zuoyuan Dong, Zixuan Sun
, Xin Yang, Xiaomei Li, Yongkang Xue, Chen Luo, Puyang Cai, Zirui Wang, Shuying Wang, Yewei Zhang, Chaolun Wang, Pengpeng Ren, Zhigang Ji, Xing Wu, Runsheng Wang, Ru Huang:
Catching the Missing EM Consequence in Soft Breakdown Reliability in Advanced FinFETs: Impacts of Self-heating, On-State TDDB, and Layout Dependence. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c7]Pengpeng Ren, Xinfa Zhang, Junhua Liu, Runsheng Wang, Zhigang Ji, Ru Huang:
Towards the Characterization of Full ID-VG Degradation in Transistors for Future Analog Applications. IRPS 2022: 3 - [c6]Yong Liu, Pengpeng Ren, Da Wang, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
New Insight into the Aging Induced Retention Time Degraded of Advanced DRAM Technology. IRPS 2022: 6 - [c5]Da Wang
, Yong Liu, Pengpeng Ren, Longda Zhou, Zhigang Ji, Junhua Liu, Runsheng Wang, Ru Huang:
Characterization and Modelling of Hot Carrier Degradation in pFETs under Vd>Vg Condition for sub-20nm DRAM Technologies. IRPS 2022: 7 - 2021
- [j2]Chunyang Liu
, Pengpeng Ren, Bo Zhou
, Jianfu Zhang
, Hui Fang
, Zhigang Ji
:
Investigation on the Implementation of Stateful Minority Logic for Future In-Memory Computing. IEEE Access 9: 168648-168655 (2021)
2010 – 2019
- 2018
- [j1]Shaofeng Guo, Runsheng Wang, Pengpeng Ren, Changze Liu, Mulong Luo, Xiaobo Jiang, Yangyuan Wang, Ru Huang:
Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits. Microelectron. Reliab. 81: 101-111 (2018) - [c4]Pengpeng Ren, Changze Liu, Sanping Wan, Jiayang Zhang, Zhuoqing Yu, Nie Liu, Yongsheng Sun, Runsheng Wang, Canhui Zhan, Zhenghao Gan, Waisum Wong, Yu Xia, Ru Huang:
New insights into the HCI degradation of pass-gate transistor in advanced FinFET technology. IRPS 2018: 3-1 - 2017
- [c3]Shaofeng Guo, Runsheng Wang, Zhuoqing Yu, Peng Hao, Pengpeng Ren, Yangyuan Wang, Siyu Liao, Chunyi Huang, Tianlei Guo, Alvin Chen, Jushan Xie, Ru Huang:
Towards reliability-aware circuit design in nanoscale FinFET technology: - New-generation aging model and circuit reliability simulator. ICCAD 2017: 780-785 - 2016
- [c2]Pengpeng Ren, Runsheng Wang, Ru Huang:
Layout dependent BTI and HCI degradation in nano CMOS technology: A new time-dependent LDE and impacts on circuit at end of life. ICICDT 2016: 1-3 - 2015
- [c1]Ketul B. Sutaria, Pengpeng Ren, Abinash Mohanty
, Xixiang Feng, Runsheng Wang, Ru Huang, Yu Cao
:
Duty cycle shift under static/dynamic aging in 28nm HK-MG technology. IRPS 2015: 7
Coauthor Index
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