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ORCIDJinshun Bi
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2020 – today
- 2023
[c3]Jinshun Bi:
Nanoscale Air Channel Devices for Emerging IC Applications. ICICDT 2023: xxxiii- 2022
- [j16]Xueqin Yang, Yannan Xu, Jinshun Bi, Kai Xi, Linjie Fan
, Lanlong Ji, Gaobo Xu:
Total ionizing dose effects on aluminum oxide/zirconium-doped hafnium oxide stack ferroelectric tunneling junctions. Sci. China Inf. Sci. 65(6): 1-2 (2022) - [j15]Qiang Wang, Yankun Wang, Ren Luo, Jianjian Wang, Lanlong Ji, Zhuangde Jiang, Christian Wenger, Zhitang Song, Sannian Song, Wei Ren, Jinshun Bi, Gang Niu:
Ultrathin HfO2/Al2O3 bilayer based reliable 1T1R RRAM electronic synapses with low power consumption for neuromorphic computing. Neuromorph. Comput. Eng. 2(4): 44012 (2022) - 2021
- [j14]Jianjian Wang, Jinshun Bi, Gang Liu, Hua Bai, Kai Xi, Bo Li, Sandip Majumdar, Lanlong Ji, Ming Liu, Zhangang Zhang:
Simulations of single event effects on the ferroelectric capacitor-based non-volatile SRAM design. Sci. China Inf. Sci. 64(4) (2021) - 2020
- [j13]Gangping Yan, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Linjie Fan, Huaxiang Yin:
Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor. IEEE Access 8: 154898-154905 (2020) - [j12]Guoliang Tian, Jinshun Bi, Gaobo Xu, Kai Xi, Xueqin Yang, Sandip Majumdar, Huaxiang Yin, Qiuxia Xu, Wenwu Wang:
Single-event-transient effects in silicon-on-insulator ferroelectric double-gate vertical tunneling field effect transistors. Sci. China Inf. Sci. 63(12) (2020) - [j11]Linjie Fan, Jinshun Bi, Kai Xi, Sandip Majumdar, Bo Li:
Performance Optimization of FD-SOI Hall Sensors Via 3D TCAD Simulations. Sensors 20(10): 2751 (2020) - [j10]Linjie Fan, Jinshun Bi, Kai Xi, Gangping Yan:
Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations. Sensors 20(14): 3946 (2020)
2010 – 2019
- 2019
- [j9]Kai Xi, Jinshun Bi, Sandip Majumdar, Bo Li, Jing Liu, Yannan Xu, Ming Liu:
Total ionizing dose effects on graphene-based charge-trapping memory. Sci. China Inf. Sci. 62(12): 222401 (2019) - [c2]Jinshun Bi:
Radiation effects of floating-gate (FG) and charge-trapping (CT) Flash memory technologies. ICICDT 2019: 1-3 - 2018
- [j8]Teng Zhang, Bruno Allard, Jinshun Bi:
The synergetic effects of high temperature gate bias and total ionization dose on 1.2 kV SiC devices. Microelectron. Reliab. 88-90: 631-635 (2018) - [j7]Jinshun Bi, Yuan Duan, Kai Xi, Bo Li:
Total ionizing dose and single event effects of 1 Mb HfO2-based resistive-random-access memory. Microelectron. Reliab. 88-90: 891-897 (2018) - [j6]Haibin Wang, Xixi Dai, Yangsheng Wang, Issam Nofal, Li Cai, Zicai Shen, Wanxiu Sun, Jinshun Bi, Bo Li, Gang Guo, Li Chen, Sang H. Baeg:
A single event upset tolerant latch design. Microelectron. Reliab. 88-90: 909-913 (2018) - 2017
- [j5]Yannan Xu, Jinshun Bi, Gaobo Xu, Kai Xi, Bo Li, Ming Liu:
Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci. China Inf. Sci. 60(12): 120401:1-120401:3 (2017) - [j4]Haibin Wang, Ao Sheng, Shiqi Wang, Jinshun Bi, Li Chen, Xiaofeng Liu:
SEU reduction effectiveness of common centroid layout in differential latch at 130-nm CMOS technology. Microelectron. Reliab. 72: 39-44 (2017) - [c1]Feng Zhang, Dongyu Fan, Yuan Duan, Jin Li, Cong Fang, Yun Li, Xiaowei Han, Lan Dai, Cheng-Ying Chen, Jinshun Bi, Ming Liu, Meng-Fan Chang:
A 130nm 1Mb HfOx embedded RRAM macro using self-adaptive peripheral circuit system techniques for 1.6X work temperature range. A-SSCC 2017: 173-176 - 2016
- [j3]Haohao Zhang, Jinshun Bi, Haibin Wang, Hongyang Hu, Jin Li, Lanlong Ji, Ming Liu:
Study of total ionizing dose induced read bit errors in magneto-resistive random access memory. Microelectron. Reliab. 67: 104-110 (2016) - 2015
- [j2]Haibin Wang, Rui Liu, Li Chen, Jinshun Bi, Mulong Li, Yuanqing Li:
A Novel Built-in Current Sensor for N-WELL SET Detection. J. Electron. Test. 31(4): 395-401 (2015) - 2014
- [j1]Haibin Wang, Mulong Li, Li Chen, Rui Liu, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong, Rita Fung, Jinshun Bi:
Single Event Resilient Dynamic Logic Designs. J. Electron. Test. 30(6): 751-761 (2014)
Coauthor Index
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