"STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm ..."

Doyoung Jang et al. (2013)

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DOI: 10.1109/ESSDERC.2013.6818843

access: closed

type: Conference or Workshop Paper

metadata version: 2021-05-05

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Doyoung Jang, Marie Garcia Bardon, Dmitry Yakimets, Kenichi Miyaguchi, An De Keersgieter, Thomas Chiarella, Romain Ritzenthaler, Morin Dehan, Abdelkarim Mercha:
STI and eSiGe source/drain epitaxy induced stress modeling in 28 nm technology with replacement gate (RMG) process. ESSDERC 2013: 159-162

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