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"Bias-stress-induced increase in parasitic resistance of InP-based ..."

Tetsuya Suemitsu et al. (2002)

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DOI: 10.1016/S0026-2714(01)00215-3

access: closed

type: Journal Article

metadata version: 2021-04-09

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Tetsuya Suemitsu, Yoshino K. Fukai, Hiroki Sugiyama, Kazuo Watanabe, Haruki Yokoyama:
Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs. Microelectron. Reliab. 42(1): 47-52 (2002)

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