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Andrea Fantini

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Journal Articles

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2018
[j3]
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  - journals/tches/ChuangDFGLV18
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Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede:
A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. 2018(1): 98-117 (2018)
2017
[j2]
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  - journals/wicomm/FantiniFM17
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Andrea Fantini, Matteo Fiorucci, Salvatore Martino:
Rock Falls Impacting Railway Tracks: Detection Analysis through an Artificial Intelligence Camera Prototype. Wirel. Commun. Mob. Comput. 2017 (2017)
2009
[j1]
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Ferdinando Bedeschi, Rich Fackenthal, Claudio Resta, Enzo Michele Donzè, Meenatchi Jagasivamani, Egidio Cassiodoro Buda, Fabio Pellizzer, David W. Chow, Alessandro Cabrini, Giacomo Matteo Angelo Calvi, Roberto Faravelli, Andrea Fantini, Guido Torelli, Duane Mills, Roberto Gastaldi, Giulio Casagrande:
A Bipolar-Selected Phase Change Memory Featuring Multi-Level Cell Storage. IEEE J. Solid State Circuits 44(1): 217-227 (2009)

Conference and Workshop Papers

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2024
[c19]
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Taras Ravsher, Andrea Fantini, Kruti Trivedi, Nouredine Rassoul, Harold Dekkers, Attilio Belmonte, Jan Van Houdt, Valeri Afanas'ev, Kurt Wostyn, Sebastien Couet, Gouri Sankar Kar:
Novel Cross-Point Architecture utilizing Distributed Diode Selector for Read Margin Amplification. IMW 2024: 1-4
[c18]
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  - conf/irps/RavsherDGCFDKDHPHABK24
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Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar:
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS 2024: 7
2023
[c17]
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  - conf/essderc/HiblotRLRFFSBWLCK23
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Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Nathali Franchina-Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Kurt Wostyn, Loris Angelo Labbate, Sebastien Couet, Gouri Sankar Kar:
NPN Si/SiGe memory selector with non-linearity>10⁵ and ON-current>6MA/cm². ESSDERC 2023: 164-167
2022
[c16]
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Mohit Gupta, Manu Perumkunnil, Andrea Fantini, Saeideh Alinezhad Chamazcoti, Woojin Kim, Marie Garcia Bardon, Gouri Sankar Kar, Arnaud Furnémont:
Design exploration of IGZO diode based VCMA array design for Storage Class Memory Applications. ESSDERC 2022: 241-244
[c15]
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Taras Ravsher, Andrea Fantini, Adrian Vaisman Chasin, Shamin H. Sharifi, Hubert Hody, Harold Dekkers, Thomas Witters, Jan Van Houdt, Valeri Afanas'ev, Sebastien Couet, Gouri Sankar Kar:
Degradation mechanism of amorphous IGZO-based bipolar metal-semiconductor-metal selectors. IRPS 2022: 10-1
[c14]
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Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar:
Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits 2022: 312-313
2021
[c13]
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Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar:
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW 2021: 1-4
[c12]
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Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar:
Modeling and spectroscopy of ovonic threshold switching defects. IRPS 2021: 1-5
2019
[c11]
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  - conf/irps/DoevenspeckDFDV19
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Jonas Doevenspeck, Robin Degraeve, Andrea Fantini, Peter Debacker, Diederik Verkest, Rudy Lauwereins, Wim Dehaene:
Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications. IRPS 2019: 1-6
2018
[c10]
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  - conf/essderc/LebanovFDNWSSGH18
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Ana Lebanov, Andrea Fantini, Robin Degraeve, Manoj Nag, Myriam Willegems, Steve Smout, Soeren Steudel, Jan Genoe, Paul Heremans, Kris Myny:
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate. ESSDERC 2018: 66-69
2015
[c9]
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  - conf/essderc/BelmonteFRHJG15
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Attilio Belmonte, Andrea Fantini, Augusto Redolfi, M. Houssa, Malgorzata Jurczak, Ludovic Goux:
Optimization of the write algorithm at low-current (10μA) in Cu/Al2O3-based conductive-bridge RAM. ESSDERC 2015: 114-117
[c8]
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C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak:
Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC 2015: 262-265
[c7]
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  - conf/grapp/FantiniMMMPPS15
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Andrea Fantini, Massimo Magrini, Salvatore Martino, Davide Moroni, Gabriele Pieri, Alberto Prestininzi, Ovidio Salvetti:
Experimenting an Embedded-sensor Network for Early Warning of Natural Risks Due to Fast Failures along Railways. IMTA 2015: 85-91
2008
[c6]
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  - conf/icecsys/CabriniFGT08
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Alessandro Cabrini, Andrea Fantini, Fabio Gallazzi, Guido Torelli:
Temperature dependence of the programmed states in GST-based multilevel phase-change memories. ICECS 2008: 186-189
[c5]
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Ferdinando Bedeschi, Rich Fackenthal, Claudio Resta, Enzo Michele Donzè, Meenatchi Jagasivamani, Egidio Cassiodoro Buda, Fabio Pellizzer, David W. Chow, Alessandro Cabrini, Giacomo Matteo Angelo Calvi, Roberto Faravelli, Andrea Fantini, Guido Torelli, Duane Mills, Roberto Gastaldi, Giulio Casagrande:
A Multi-Level-Cell Bipolar-Selected Phase-Change Memory. ISSCC 2008: 428-429
2007
[c4]
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  - conf/ecctd/FantiniCT07
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Andrea Fantini, Alessandro Cabrini, Guido Torelli:
Impact of control signal skews on self-boosted charge pumps. ECCTD 2007: 619-622
[c3]
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  - conf/iscas/FantiniCT07
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Andrea Fantini, Alessandro Cabrini, Guido Torelli:
Impact of Control Signal Non-Idealties on Two-Phase Charge Pumps. ISCAS 2007: 1549-1552
2006
[c2]
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  - conf/icecsys/CabriniFT06
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Alessandro Cabrini, Andrea Fantini, Guido Torelli:
High-Efficiency Regulated Charge Pump for Non-Volatile Memories. ICECS 2006: 720-723
2004
[c1]
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  - conf/iscas/BedeschiBFRT04
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Ferdinando Bedeschi, Edoardo Bonizzoni, Andrea Fantini, Claudio Resta, Guido Torelli:
A low-power low-voltage MOSFET-only voltage reference. ISCAS (1) 2004: 57-60

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