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2020 – today
- 2023
[j5]Pengfei Jiang, Kunran Xu, Jie Yu, Yannan Xu, Peng Yuan, Yuan Wang, Yuting Chen, Yaxin Ding, Shuxian Lv, Zhiwei Dang, Tiancheng Gong, Yang Yang, Yan Wang, Qing Luo:
Freely switching between ferroelectric and resistive switching in Hf0.5Zr0.5O2 films and its application on high accuracy on-chip deep neural networks. Sci. China Inf. Sci. 66(2) (2023)- [j4]Haoran Yu
, Tiancheng Gong, Peng Yuan, Yuan Wang, Zhaomeng Gao, Xiaoxin Xu, Ying Sun, Ran Cheng, Jianfeng Gao, Junfeng Li, Bing Chen, Qing Luo:
Transport mechanism in Hf0.5Zr0.5O2-based ferroelectric diodes. Sci. China Inf. Sci. 66(12) (2023) - [c2]Yaxin Ding, Jianguo Yang, Yu Liu, Jianfeng Gao, Yuan Wang, Pengfei Jiang, Shuxian Lv, Yuting Chen, Boping Wang, Wei Wei, Tiancheng Gong, Kanhao Xue, Qing Luo, Xiangshui Miao, Ming Liu:
16-layer 3D Vertical RRAM with Low Read Latency (18ns), High Nonlinearity (>5000) and Ultra-low Leakage Current (~pA) Self-Selective Cells. VLSI Technology and Circuits 2023: 1-2 - [c1]Tiancheng Gong, Lihua Xu, Wei Wei, Pengfei Jiang, Peng Yuan, Bowen Nie, Yuanquan Huang, Yuan Wang, Yang Yang, Jianfeng Gao, Junfeng Li, Jun Luo, Lingfei Wang, Jianguo Yang, Qing Luo, Ling Li, Steve S. Chung, Ming Liu:
First Demonstration of a Design Methodology for Highly Reliable Operation at High Temperature on 128kb 1T1C FeRAM Chip. VLSI Technology and Circuits 2023: 1-2 - 2021
- [j3]Qingting Ding, Tiancheng Gong, Jie Yu, Xiaoxin Xu, Xiaoyan Li, Hangbing Lv, Jianguo Yang, Qing Luo, Peng Yuan, Feng Zhang, Ming Liu:
Investigation of weight updating modes on oxide-based resistive switching memory synapse towards neuromorphic computing applications. Sci. China Inf. Sci. 64(11) (2021) - 2020
- [j2]Chao Liu, Jianguo Yang, Pengfei Jiang, Qiao Wang, Donglin Zhang, Tiancheng Gong, Qingting Ding, Yuling Zhao, Qing Luo, Xiaoyong Xue, Hangbing Lv, Ming Liu:
A Low Power 4T2C nvSRAM With Dynamic Current Compensation Operation Scheme. IEEE Trans. Very Large Scale Integr. Syst. 28(11): 2469-2473 (2020)
2010 – 2019
- 2019
- [j1]Jiahao Yin, Chunmeng Dou, Danian Dong, Jie Yu, Xiaoxin Xu, Qing Luo, Tiancheng Gong, Lu Tai, Peng Yuan, Xiaoyong Xue, Ming Liu, Hangbing Lv:
A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique. IEICE Electron. Express 16(12): 20190201 (2019)
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