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ORCIDDaniel J. Lichtenwalner
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Conference and Workshop Papers
- 2024
[c11]Ayan K. Biswas, Daniel J. Lichtenwalner, Jae-Hyung Park, Brett Hull, Satyaki Ganguly, Donald A. Gajewski, Elif Balkas:
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs. IRPS 2024: 1-5- [c10]S. R. Stein, J. Kim, S. Das
, Daniel J. Lichtenwalner, S. Ryu:
Characterization of Interface Trap Density in SiC MOSFETs Subjected to High Voltage Gate Stress. IRPS 2024: 1-5 - [c9]Philipp Steinmann, Daniel J. Lichtenwalner, Shane Stein, Jae-Hyung Park, Suman Das, Sei-Hyung Ryu:
Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-SiC FETs Using the Subthreshold Slope Method. IRPS 2024: 58 - 2023
- [c8]Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu:
Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode. BCICTS 2023: 310-313 - [c7]Edward Van Brunt, Daniel J. Lichtenwalner, J. H. Park, Satyaki Ganguly, J. W. McPherson:
Lifetime Modeling of the 4H-SiC MOS Interface in the HTRB Condition Under the Influence of Screw Dislocations. IRPS 2023: 1-4 - [c6]In-Hwan Ji, Anoop Mathew, Jae-Hyung Park, Neal Oldham, Matthew McCain, Shadi Sabri, Edward Van Brunt, Brett Hull, Daniel J. Lichtenwalner, Donald A. Gajewski, John W. Palmour:
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes. IRPS 2023: 1-4 - 2022
- [c5]Satyaki Ganguly, Daniel J. Lichtenwalner, Caleb Isaacson, Donald A. Gajewski, Philipp Steinmann, Ryan Foarde, Brett Hull, Sei-Hyung Ryu, Scott Allen, John W. Palmour:
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs. IRPS 2022: 8 - 2020
- [c4]James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis:
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. IRPS 2020: 1-4 - 2019
- [c3]James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis, Mark A. Anders:
Reliability and Performance Issues in SiC MOSFETs: Insight Provided by Spin Dependent Recombination. IRPS 2019: 1-5 - 2018
- [c2]Akin Akturk, James McGarrity, Neil Goldsman, Daniel J. Lichtenwalner, Brett Hull, Dave Grider, Richard Wilkins:
The effects of radiation on the terrestrial operation of SiC MOSFETs. IRPS 2018: 2 - [c1]Daniel J. Lichtenwalner, Brett Hull, Edward Van Brunt, Shadi Sabri, Donald A. Gajewski, Dave Grider, Scott Allen, John W. Palmour, Akin Akturk, James McGarrity:
Reliability studies of SiC vertical power MOSFETs. IRPS 2018: 2
Coauthor Index
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