"Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation."

James P. Ashton et al. (2020)

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DOI: 10.1109/IRPS45951.2020.9128320

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-30

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James P. Ashton, Patrick M. Lenahan, Daniel J. Lichtenwalner, Aivars J. Lelis:
Leakage Currents and E' Centers in 4H-SiC MOSFETs with Barium Passivation. IRPS 2020: 1-4

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