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ORCIDYu Wu 0015
Person information
- affiliation: Beijing University of Technology, Faculty of Information Technology, State Key Laboratory of Advanced Power Transmission Technology, Beijing, China
Other persons with the same name
- Yu Wu — disambiguation page
- Yu Wu 0001
![[0000-0001-6108-957X]](https://dblp1.uni-trier.de/img/orcid-mark.12x12.png "0000-0001-6108-957X")
— Chongqing University of Posts and Telecommunications, Institute of Computer Science and Technology, China - Yu Wu 0002 — Chinese Academy of Sciences, Institute of Remote Sensing and Digital Earth, Beijing, China
- Yu Wu 0003 — University of California at Davis, Department of Electrical and Computer Engineering, CA, USA
- Yu Wu 0004 — University of Liverpool, Department of Electrical Engineering and Electronics, UK
- Yu Wu 0005 — The Ohio State University, Department of Electrical and Computer Engineering, Columbus, OH, USA
- Yu Wu 0007 — University College London, Department of Electronic and Electrical Engineering, UK
- Yu Wu 0008 — University of Bourgogne Franche-Comté, FEMTO-ST Institute, CNRS, Belfort, France (and 1 more)
- Yu Wu 0009 — Chongqing University, College of Aerospace Engineering, Chongqing, China
- Yu Wu 0010 — Dongguan Univeristy of Technology, China (and 2 more)
- Yu Wu 0011 — Princeton University, NJ, USA (and 1 more)
- Yu Wu 0012 — Microsoft Research Asia, Beijing, China (and 1 more)
- Yu Wu 0013 — Guangzhou University, School of Computer Science and Cyber Engineering, School of Computer Science and Educational Software, China
- Yu Wu 0014 — ShanghaiTech University, China
- Yu Wu 0016 — Georgia Institute of Technology, Department of Electrical and Computer Engineering, Atlanta, GA, USA (and 1 more)
- Yu Wu 0017 — Pennsylvania State University, College of Information Sciences and Technology, University Park, PA, USA
- Yu Wu 0018 — Shanghai Jiao Tong University, Department of Automation, Shanghai, China
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2020 – today
- 2023
[c14]Shiyu Zhang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
Optimized Design of Trench Termination for High-Voltage β-Ga2O3 Trench MOS Barrier Schottky Diode with Anode Electrode Extension. EITCE 2023: 66-72- [c13]Kang Zhang, Yu Wu, Dongqing Hu, Yunpeng Jia, Xintian Zhou:
Improvement of reverse recovery characteristics through integration of MOS-barrier Schottky diode in SiC superjunction structure. EITCE 2023: 1601-1608 - 2022
- [c12]Yuefeng Wu, Yu Wu, Xintian Zhou, Feng Liu, Lei Zong:
Design and Simulation of 1.2kV Semi-Super Junction FRD with Vertical Variation Doping. EITCE 2022: 417-421 - [c11]Chongning Zhao, Dongqing Hu, Yuechao Zheng, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Design and simulation study of multi-trench termination for 1200V SiC devices with charge coupled drift region. EITCE 2022: 498-502 - [c10]Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE 2022: 605-610 - [c9]Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE 2022: 617-622 - 2021
- [c8]Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong:
Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. EITCE 2021: 65-70 - [c7]Kai Zhao, Yu Wu, Yueyang Liu, Xintian Zhou, Zhaomin Yao, Yingying Lei:
The Reverse Recovery Characteristics of an Improved 3.3-kV CIBH Diode with Local Heavily Doped N++ Regions at the Cathode. EITCE 2021: 120-126 - [c6]Lihao Wang, Xintian Zhou, Feng Liu, Lei Zhang, Yu Wu, Xinyu Li:
High voltage CIBH diodes with new structure on the cathode side of the edge. EITCE 2021: 194-199 - [c5]Chen Gao, Yu Wu, Yueyang Liu, Xintian Zhou, Kesheng Wang, Zheng Zhong:
Investigation of 4500 V FRD Implanted from Cathode with Different Depths Using 1-D Varied Doping. EITCE 2021: 1449-1454 - [c4]Ting Li, Dongqing Hu, Yunpeng Jia, Xintian Zhou, Yu Wu:
3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET. EITCE 2021: 1520-1525 - 2020
- [c3]Lihao Wang, Yu Wu, Yunpeng Jia, Yuanfu Zhao, Zhonghan Deng:
Influence of Backside p-Region Width on the Overcurrent Reverse Recovery of High-voltage RFC Diodes. EITCE 2020: 965-969 - [c2]Jie Cao, Yu Wu, Yueyang Liu, Xintian Zhou, Lihao Wang, Meng Liu, Lei Sun:
The Influence of Backside Floating P Area on the Overcurrent Reverse Recovery for a 3.3-kV CIBH Diode. EITCE 2020: 1060-1064 - [c1]Meng Liu, Yu Wu, Xintian Zhou, Jie Cao, Lei Sun, Lihao Wang:
Superior Static Electrical Characteristics of a 650-V 4H-SiC Accumulation-Mode MOS Channel Diode. EITCE 2020: 1065-1069
2010 – 2019
- 2018
- [j1]Yunpeng Jia, Zhenhua Lin, Dongqing Hu, Yu Wu, Peng Li, Guanghai Liu:
Micro-Raman spectroscopy applied in crystal structure analysis on the ESD failure mechanism of SiC JBS diodes. Microelectron. Reliab. 82: 37-41 (2018)
Coauthor Index
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