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"A 4H-SiC Trench MOSFET with the vertical field plate coupled floating ..."

Wangda Wang et al. (2022)

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DOI: 10.1145/3573428.3573537

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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Wangda Wang, Dongqing Hu, Xintian Zhou, Yunpeng Jia, Yu Wu:
A 4H-SiC Trench MOSFET with the vertical field plate coupled floating island and two epi-layers. EITCE 2022: 617-622

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