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"Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with ..."

Yingying Lei et al. (2021)

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DOI: 10.1145/3501409.3501422

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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Yingying Lei, Yu Wu, Xintian Zhou, Meng Liu, Xinyu Li, Xingyu Fang, Kai Zhao, Zheng Zhong:
Investigation of 1200 V 4H-SiC Junction Barrier Schottky Diode with Built-in MOSFET. EITCE 2021: 65-70

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