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"Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field ..."

Yuechao Zheng et al. (2022)

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DOI: 10.1145/3573428.3573535

access: closed

type: Conference or Workshop Paper

metadata version: 2024-04-04

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  - conf/eitce/ZhengHZJZWL22
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  - https://dblp.org/rec/conf/eitce/ZhengHZJZWL22
Yuechao Zheng, Dongqing Hu, Chongning Zhao, Yunpeng Jia, Xintian Zhou, Yu Wu, Ting Li:
Simulation study of 1200V SiC-based trench-gate MOSFET with vertical field plate protection. EITCE 2022: 605-610

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