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2020 – today
- 2020
[j1]Dongkyun Kim, Kibong Koo, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Ki Hun Kwon, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Jong-Sam Kim, Seungwook Oh, Minsu Park, Dain Im, Yongsung Lee, Mingyu Park, Jonghyuck Choi, Junhyun Chun, Kyowon Jin, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Changhyun Kim, Minsik Han:
A 1.1-V 10-nm Class 6.4-Gb/s/Pin 16-Gb DDR5 SDRAM With a Phase Rotator-ILO DLL, High-Speed SerDes, and DFE/FFE Equalization Scheme for Rx/Tx. IEEE J. Solid State Circuits 55(1): 167-177 (2020)
2010 – 2019
- 2019
- [c4]Dongkyun Kim, Minsu Park, Sungchun Jang, Jun-Yong Song, Hankyu Chi, Geunho Choi, Sunmyung Choi, Jaeil Kim, Changhyun Kim, Kyung Whan Kim, Kibong Koo, Seonghwi Song, Yongmi Kim, Dong-Uk Lee, Jaejin Lee, Dae Suk Kim, Ki Hun Kwon, Minsik Han, Byeongchan Choi, Hongjung Kim, Sanghyun Ku, Yeonuk Kim, Jong-Sam Kim, Sanghui Kim, Youngsuk Seo, Seungwook Oh, Dain Im, Haksong Kim, Jonghyuck Choi, Jinil Chung, Changhyun Lee, Yongsung Lee, Joo-Hwan Cho, Junhyun Chun, Jonghoon Oh:
A 1.1V 1ynm 6.4Gb/s/pin 16Gb DDR5 SDRAM with a Phase-Rotator-Based DLL, High-Speed SerDes and RX/TX Equalization Scheme. ISSCC 2019: 380-382 - 2016
- [c3]Jong-Chern Lee, Jihwan Kim, Kyung Whan Kim, Young Jun Ku, Dae Suk Kim, Chunseok Jeong, Tae Sik Yun, Hongjung Kim, Ho Sung Cho, Sangmuk Oh, Hyun Sung Lee, Ki Hun Kwon, Dong Beom Lee, Young Jae Choi, Jaejin Lee, Hyeon Gon Kim, Jun Hyun Chun, Jonghoon Oh, Seok Hee Lee:
High bandwidth memory(HBM) with TSV technique. ISOCC 2016: 181-182 - [c2]Jong-Chern Lee, Jihwan Kim, Kyung Whan Kim, Young Jun Ku, Dae Suk Kim, Chunseok Jeong, Tae Sik Yun, Hongjung Kim, Ho Sung Cho, Yeon Ok Kim, Jae-Hwan Kim, Jin Ho Kim, Sangmuk Oh, Hyun Sung Lee, Ki Hun Kwon, Dong Beom Lee, Young Jae Choi, Jeajin Lee, Hyeon Gon Kim, Jun Hyun Chun, Jonghoon Oh, Seok Hee Lee:
18.3 A 1.2V 64Gb 8-channel 256GB/s HBM DRAM with peripheral-base-die architecture and small-swing technique on heavy load interface. ISSCC 2016: 318-319 - 2014
- [c1]Dong-Uk Lee, Kyung Whan Kim, Kwan-Weon Kim, Hongjung Kim, Ju Young Kim, Young Jun Park, Jae Hwan Kim, Dae Suk Kim, Heat Bit Park, Jin Wook Shin, Jang Hwan Cho, Ki Hun Kwon, Min Jeong Kim, Jaejin Lee, Kunwoo Park, Byong-Tae Chung, Sung-Joo Hong:
25.2 A 1.2V 8Gb 8-channel 128GB/s high-bandwidth memory (HBM) stacked DRAM with effective microbump I/O test methods using 29nm process and TSV. ISSCC 2014: 432-433
Coauthor Index
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