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Fernando Guarin
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Conference and Workshop Papers
- 2023
- [c19]Dora A. Chaparro-Ortiz, Alan Y. Otero-Carrascal, Edmundo A. Gutiérrez-D.
, Reydezel Torres-Torres, Oscar Huerta-Guevara, P. Srinivasan, Fernando Guarin:
Impact of Non-Conducting HCI Degradation on Small-Signal Parameters in RF SOI MOSFET. IRPS 2023: 1-6 - [c18]Aarti Rathi, Abhisek Dixit, Naga Satish, P. Srinivasan, Fernando Guarin:
Reliability of SPST Series-stacked SOI CMOS RF Switches for mmWave Applications. IRPS 2023: 1-6 - [c17]P. Srinivasan, J. Lestage, Shafi Syed, X. Hui, Stephen Moss, Oscar D. Restrepo, Oscar H. Gonzalez, Y. Chen, T. McKay, Anirban Bandyopadhyay, Ned Cahoon, Fernando Guarin, Byoung Min, Martin Gall, S. Ludvik:
RF long term aging behavior and reliability in 22FDX WiFi Power Amplifier designs for 5G applications. IRPS 2023: 1-6 - 2022
- [c16]Aarti Rathi, Abhisek Dixit
, P. Srinivasan
, Oscar Huerta-Gonzalez, Fernando Guarin:
RF Reliability of CMOS-Based Power Amplifier Cell for 5G mmWave Applications. IRPS 2022: 4 - [c15]P. Srinivasan
, Fernando Guarin, Enkhbayasgalan Gantsog, Harish Krishnaswamy, Arun Natarajan:
Excellent RF Product HTOL reliability of 5G mmWave beamformer chip fabricated using GF 45RFSOI technologies. IRPS 2022: 4 - [c14]M. Hauser, P. Srinivasan, A. Vallett, R. Krishnasamy, Fernando Guarin, Dave Brochu, V. Pham, Byoung Min:
Parasitic Drain Series Resistance Effects on Non-conducting Hot Carrier Reliability. IRPS 2022: 5 - [c13]Asifa Amin, Aarti Rathi, Sujit K. Singh, Abhisek Dixit
, Oscar Huerta-Gonzalez, P. Srinivasan
, Fernando Guarin:
Deep Cryogenic Temperature TDDB in 45-nm PDSOI N-channel FETs for Quantum Computing Applications. IRPS 2022: 11 - [c12]Ned Cahoon, P. Srinivasan, Fernando Guarin:
6G Roadmap for Semiconductor Technologies: Challenges and Advances. IRPS 2022: 11 - 2021
- [c11]Aarti Rathi, P. Srinivasan
, Fernando Guarin, Abhisek Dixit
:
Large Signal RF Reliability of 45-nm RFSOI Power Amplifier Cell for Wi-Fi6 Applications. IRPS 2021: 1-6 - [c10]P. Srinivasan
, Fernando Guarin:
CMOS RF reliability for 5G mmWave applications - Challenges and Opportunities. IRPS 2021: 1-7 - [c9]P. Srinivasan
, Fernando Guarin, Shafi Syed, Joris Angelo Sundaram Jerome, Wen Liu, Sameer H. Jain, Dimitri Lederer, Stephen Moss, Paul Colestock, Anirban Bandyopadhyay, Ned Cahoon, Byoung Min, Martin Gall:
RF Reliability of SOI-based Power Amplifier FETs for mmWave 5G Applications. IRPS 2021: 1-6 - 2020
- [c8]Paul Colestock, P. Srinivasan, Fernando Guarin:
Silicon Based RF Reliability Challenges for 5G Communications. IRPS 2020: 1-4 - [c7]Peter C. Paliwoda, Mohamed A. Rabie, Oscar D. Restrepo
, Eduardo Cruz Silva
, E. Kaltalioglu, Fernando Guarin, Kenneth Barnett, Jeffrey B. Johnson, William Taylor, Myra Boenke, Byoung Min:
Thermal Characterization and TCAD Modeling of a Power Amplifier in 45RFSOI for 5G mmWave Applications. IRPS 2020: 1-5 - [c6]P. Srinivasan, Paul Colestock, Thomas Samuels, Stephen Moss, Fernando Guarin, Byoung Min:
A novel methodology to evaluate RF reliability for SOI CMOS-based Power Amplifier mmWave applications. IRPS 2020: 1-4 - [c5]Peter C. Paliwoda, Maria Toledano-Luque, Tanya Nigam, Fernando Guarin, M. Nour, S. Cimino, L. Pantisano, A. Gupta, Oscar Huerta-Gonzalez, M. Hauser, W. Liu, A. Vayshenker, D. Ioannou, D. Lee, L. Jiang, P. Yee, Stewart E. Rauch
, B. Min:
Self-heating characterization and its applications in technology development. NATW 2020: 1-7 - 2018
- [c4]Wen Liu, Andreas Kerber, Fernando Guarin, Claude Ortolland:
Cap layer and multi-work-function tuning impact on TDDB/BTI in SOI FinFET devices. IRPS 2018: 2 - 2015
- [c3]Steven W. Mittl, Fernando Guarin:
Self-heating and its implications on hot carrier reliability evaluations. IRPS 2015: 4 - 2014
- [c2]A. Erika Pondigo de los, Edmundo A. Gutiérrez-D.
, Joel Molina Reyes
, Fernando Guarin:
Non-homogeneous space mechanical strain induces asymmetrical magneto-tunneling conductance in MOSFETs. ESSDERC 2014: 90-93 - 2013
- [c1]Victor Vega-Gonzalez, Edmundo Gutierrez-Dominguez
, Fernando Guarin:
A negative differential resistance effect implemented with a single MOSFET from 375 k down to 80 k. ESSDERC 2013: 330-333
Coauthor Index
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