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2020 – today
- 2020
[c3]Toshiyuki Kouchi, Noriyasu Kumazaki, Masashi Yamaoka, Sanad Bushnaq, Takuyo Kodama, Yuki Ishizaki, Yoko Deguchi, Akio Sugahara, Akihiro Imamoto, Norichika Asaoka, Ryosuke Isomura, Takaya Handa, Junichi Sato, Hiromitsu Komai, Atsushi Okuyama, Naoaki Kanagawa, Yasufumi Kajiyama, Yuri Terada, Hidekazu Ohnishi, Hiroki Yabe, Cynthia Hsu, Mami Kakoi, Masahiro Yoshihara:
13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs. ISSCC 2020: 226-228
2010 – 2019
- 2019
- [c2]Chang Hua Siau, Kwang-Ho Kim, Seungpil Lee, Katsuaki Isobe, Noboru Shibata, Kapil Verma, Takuya Ariki, Jason Li, Jong Yuh, Anirudh Amarnath, Qui Nguyen, Ohwon Kwon, Stanley Jeong, Heguang Li, Hua-Ling Hsu, Taiyuan Tseng, Steve Choi, Siddhesh Darne, Pradeep Anantula, Alex Yap, Hardwell Chibvongodze, Hitoshi Miwa, Minoru Yamashita, Mitsuyuki Watanabe, Koichiro Hayashi, Yosuke Kato, Toru Miwa, Jang Yong Kang, Masatoshi Okumura, Naoki Ookuma, Muralikrishna Balaga, Venky Ramachandra, Aki Matsuda, Swaroop Kulkarni, Raghavendra Rachineni, Pai K. Manjunath, Masahito Takehara, Anil Pai, Srinivas Rajendra, Toshiki Hisada, Ryo Fukuda, Naoya Tokiwa, Kazuaki Kawaguchi, Masashi Yamaoka, Hiromitsu Komai, Takatoshi Minamoto, Masaki Unno, Susumu Ozawa, Hiroshi Nakamura, Tomoo Hishida, Yasuyuki Kajitani, Lei Lin:
A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology. ISSCC 2019: 218-220 - 2016
- [j1]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kono, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology. IEEE J. Solid State Circuits 51(1): 196-203 (2016) - 2015
- [c1]Mario Sako, Yoshihisa Watanabe, Takao Nakajima, Jumpei Sato, Kazuyoshi Muraoka, Masaki Fujiu, Fumihiro Kouno, Michio Nakagawa, Masami Masuda, Koji Kato, Yuri Terada, Yuki Shimizu, Mitsuaki Honma, Akihiro Imamoto, Tomoko Araya, Hayato Konno, Takuya Okanaga, Tomofumi Fujimura, Xiaoqing Wang, Mai Muramoto, Masahiro Kamoshida, Masatoshi Kohno, Yoshinao Suzuki, Tomoharu Hashiguchi, Tsukasa Kobayashi, Masashi Yamaoka, Ryuji Yamashita:
7.1 A low-power 64Gb MLC NAND-flash memory in 15nm CMOS technology. ISSCC 2015: 1-3
Coauthor Index
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