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ORCIDKi-Tae Park
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Publications
- 2015
[j6]Ki-Tae Park, Sangwan Nam, Dae-Han Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Myung-Hoon Choi, Dong-Hun Kwak, Doo-Hyun Kim, Minsu Kim, Hyun Wook Park, Sang-Won Shim, Kyung-Min Kang, Sang-Won Park, Kangbin Lee, Hyun-Jun Yoon, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dae-Seok Byeon, Kihwan Choi, Jin-Man Han, Kyehyun Kyung, Jeong-Hyuk Choi, Kinam Kim:
Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming. IEEE J. Solid State Circuits 50(1): 204-213 (2015)- 2014
- [c6]Ki-Tae Park, Jin-Man Han, Dae-Han Kim, Sangwan Nam, Kihwan Choi, Minsu Kim, Pansuk Kwak, Doosub Lee, Yoon-Hee Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun Wook Park, Sang-Won Shim, Hyun-Jun Yoon, Doo-Hyun Kim, Sang-Won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyunghwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyunggon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jae-hoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kyehyun Kyung, Jeong-Hyuk Choi:
19.5 Three-dimensional 128Gb MLC vertical NAND Flash-memory with 24-WL stacked layers and 50MB/s high-speed programming. ISSCC 2014: 334-335 - 2012
- [c5]Seung-Hwan Shin, Dong-Kyo Shim, Jaeyong Jeong, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, Tae-Young Kim, Hyun Wook Park, Hyun-Jun Yoon, Youngsun Song, Yoon-Hee Choi, Sang-Won Shim, Yang-Lo Ahn, Ki-Tae Park, Jin-Man Han, Kyehyun Kyung, Young-Hyun Jun:
A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory. VLSIC 2012: 132-133 - 2011
- [c4]Ki-Tae Park, Ohsuk Kwon, Sangyong Yoon, Myung-Hoon Choi, In-Mo Kim, Bo-Geun Kim, Min-Seok Kim, Yoon-Hee Choi, Seung-Hwan Shin, Youngson Song, Joo-Yong Park, Jae-Eun Lee, Chang-Gyu Eun, Ho-Chul Lee, Hyeong-Jun Kim, Jun-Hee Lee, Jong-Young Kim, Tae-Min Kweon, Hyun-Jun Yoon, Taehyun Kim, Dong-Kyo Shim, Jongsun Sel, Ji-Yeon Shin, Pansuk Kwak, Jin-Man Han, Keon-Soo Kim, Sungsoo Lee, Youngho Lim, Tae-Sung Jung:
A 7MB/s 64Gb 3-bit/cell DDR NAND flash memory in 20nm-node technology. ISSCC 2011: 212-213
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