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Publication search results
found 16 matches
- 2016
- Giacomo Barletta, V. C. Ngwan:
Study of gate leakage mechanism in advanced charge-coupled MOSFET (CC-MOSFET) technology. Microelectron. Reliab. 57: 20-23 (2016) - Shin-Hua Chao, Chih-Ping Hung, Mark Chen, Youru Lee, Joey Huang, Golden Kao, Ding-Bang Luh:
An embedded trace FCCSP substrate without glass cloth. Microelectron. Reliab. 57: 101-110 (2016) - Tengfei Deng, Cong Ye, Jiaji Wu, Pin He, Hao Wang:
Improved performance of ITO/TiO2/HfO2/Pt random resistive accessory memory by nitrogen annealing treatment. Microelectron. Reliab. 57: 34-38 (2016) - Huixiang Huang, Yanyan Huang, Jiachun Zheng, Sufen Wei, Kai Tang, Dawei Bi, Zhengxuan Zhang:
Hardening silicon-on-insulator nMOSFETs by multiple-step Si+ implantation. Microelectron. Reliab. 57: 1-9 (2016) - Mohammad Tariq Jan, Farooq Ahmad, Nor Hisham Hamid, Mohd Haris M. Khir, Khalid Ashraf, Muhammad Shoaib:
Temperature dependent Young's modulus and quality factor of CMOS-MEMS resonator: Modelling and experimental approach. Microelectron. Reliab. 57: 64-70 (2016) - Feng Ji, Jing-Ping Xu, Lu Liu, Wing Man Tang, Pui To Lai:
A 2-D analytical threshold-voltage model for GeOI/GeON MOSFET with high-k gate dielectric. Microelectron. Reliab. 57: 24-33 (2016) - Mehdi Kamal, Qing Xie, Massoud Pedram, Ali Afzali-Kusha, Saeed Safari:
An efficient temperature dependent hot carrier injection reliability simulation flow. Microelectron. Reliab. 57: 10-19 (2016) - Ming Zhou, Xiao De Yuan, Peng Shi Min, Hong Zhong Shan, Shu Yi Xie:
Experimental study of multilayer SiCN barrier film in 45/40 nm technological node and beyond. Microelectron. Reliab. 57: 86-92 (2016) - Sung-Ho Park, Jae Hoon Kim:
Lifetime estimation of LED lamp using gamma process model. Microelectron. Reliab. 57: 71-78 (2016) - Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg:
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57: 39-46 (2016) - Akram A. Salman, Farzan Farbiz, Ann Concannon, Hal Edwards, Gianluca Boselli:
Improved inductive-system-level IEC ESD performance for automotive applications using mutual ballasted ESD protection technique. Microelectron. Reliab. 57: 47-52 (2016) - Mirko Scholz, Shih-Hung Chen, Geert Hellings, Dimitri Linten:
Impact of on- and off-chip protection on the transient-induced latch-up sensitivity of CMOS IC. Microelectron. Reliab. 57: 53-58 (2016) - Ankit Srivastava, Gene Worley, Xiaohong Quan, Guoqing Miao:
ESD protection for negative charge pump (CP) using CP internal switches. Microelectron. Reliab. 57: 59-63 (2016) - Ran Wang, Jie Han, Bruce F. Cockburn, Duncan G. Elliott:
Design, evaluation and fault-tolerance analysis of stochastic FIR filters. Microelectron. Reliab. 57: 111-127 (2016) - X. Y. Wang, H. Zhang, X. P. Ma, Q. Cheng, C. G. Li, M. X. Li, T. N. Chen, P. Zhang, J. Q. Shao:
Degradation behavior and mechanism of polymer films for high-ohmic resistor protection in a heat and humid environment. Microelectron. Reliab. 57: 79-85 (2016) - Byung-seung Yim, Jong-Min Kim:
Thermo-mechanical reliability of a multi-walled carbon nanotube-incorporated solderable isotropic conductive adhesive. Microelectron. Reliab. 57: 93-100 (2016)
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