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"Experiments and root cause analysis for active-precharge hammering fault ..."

Kyungbae Park et al. (2016)

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DOI: 10.1016/J.MICROREL.2015.12.027

access: closed

type: Journal Article

metadata version: 2020-02-22

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Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg:
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57: 39-46 (2016)

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