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Publication search results
found 46 matches
- 2020
- Yutaro Yamaguchi, Keigo Nakatani, Koon Hoo Teo, Shintaro Shinjo:
Millimeter-Wave GaN Device Modeling for Power Amplifiers. DRC 2020: 1-2 - Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. DRC 2020: 1-2 - H. Aquino, D. Connelly, Alexei O. Orlov, J. Chisum, Gary H. Bernstein, Wolfgang Porod:
Using Coplanar Waveguides as Spin-Wave Sources with Improved Bandwidth. DRC 2020: 1-2 - Elliott R. Brown, Weidong Zhang, Parastou Fakhimi, Tyler A. Growden
, Paul R. Berger
:
RTD Light Emission around 1550 nm with IQE up to 6% at 300 K. DRC 2020: 1-2 - Karam Cho, Sandeep Krishna Thirumala, X. Liu, Niharika Thakuria, Zhihong Chen, Sumeet Kumar Gupta:
Utilizing Valley-Spin Hall Effect in WSe2 for Low Power Non-Volatile Flip-Flop Design. DRC 2020: 1-2 - Woojin Choi, Venkatesh Balasubramanian, Peter M. Asbeck, Shadi A. Dayeh:
Linearity by Synthesis: An Intrinsically Linear AlGaN/GaN-on-Si Transistor with OIP3/(F-1)PDC of 10.1 at 30 GHz. DRC 2020: 1-2 - Sourav De
, Md. Aftab Baig, Bo-Han Qiu, Darsen D. Lu, Po-Jung Sung, Fu. K. Hsueh, Yao-Jen Lee, Chun-Jung Su:
Tri-Gate Ferroelectric FET Characterization and Modelling for Online Training of Neural Networks at Room Temperature and 233K. DRC 2020: 1-2 - Brian P. Downey, Andy Xie, Shawn Mack, D. Scott Katzer
, James G. Champlain, Yu Cao, Neeraj Nepal, Tyler A. Growden
, Vikrant J. Gokhale
, Robert L. Coffie, Matthew T. Hardy, Edward Beam, Cathy Lee, David J. Meyer:
Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design. DRC 2020: 1-2 - Matthew Hartensveld, Jing Zhang:
Field Effect Light-Emitting Diode Integration for Enhanced Hole Utilization. DRC 2020: 1-2 - Yi-Ping Huang, Ching-Sung Lee, Wei-Chou Hsu:
Normally-Off InAlN/GaN Fin-MOSHEMT with Fluorine Treatment. DRC 2020: 1-2 - Yury Yu. Illarionov
, A. G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, S. Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller
, M. I. Vexler
, N. S. Sokolov, Tibor Grasser:
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC 2020: 1-2 - Fiheon Imroze
, C. A. Mithun, Karunakaran Logesh, P. Venkatakrishnan, S. Dutta:
Effect of recessed electrodes on contact resistance in Organic Thin Film Transistor based on polymer dielectric. DRC 2020: 1-2 - Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury
:
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode. DRC 2020: 1-2 - Andrew H. Jones, Stephen D. March, Seth R. Bank, Joe C. Campbell:
2-μm-Compatible AlInAsSb Avalanche Photodiodes. DRC 2020: 1-2 - Asir Intisar Khan
, Alwin Daus
, Eric Pop
:
Flexible Low-Power Superlattice-Like Phase Change Memory. DRC 2020: 1 - Muhammad Bilal Khan, Sayantan Ghosh, Slawomir Prucnal, Tom Mauersberger
, René Hübner, Maik Simon
, Thomas Mikolajick
, Artur Erbe, Yordan M. Georgiev
:
Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing. DRC 2020: 1-2 - Raihan Sayeed Khan, A. B. M. Hasan Talukder, Faruk Dirisaglik, Ali Gokirmak
, Helena Silva
:
Stopping Resistance Drift in Phase Change Memory Cells. DRC 2020: 1-2 - Jeevesh Kumar, Ansh, Hemanjaneyulu Kuruva, Mayank Shrivastava:
Defect Assisted Metal-TMDs Interface Engineering: A First Principle Insight. DRC 2020: 1-2 - Aravindh Kumar, Koosha Nassiri Nazif, Pranav Ramesh, Krishna Saraswat:
Doped WS2 transistors with large on-off ratio and high on-current. DRC 2020: 1-2 - Chao-Yin Kuo, Shui-Jinn Wang, Po-Ting Chen, Rong-Ming Ko:
Near-Nernstian pH Sensors Based on Hydrothermally Grown NiO Nanosheets on Hierarchically Roughened Si Substrates. DRC 2020: 1-2 - Seunghyun Lee, Sri Harsha Kodati, Douglas R. Fink, Theodore J. Ronningen
, Andrew H. Jones, Joe C. Campbell, Martin Winslow, Christoph H. Grein, Sanjay Krishna:
Multiplication characteristics of Al0.4Ga0.07In0.53As avalanche photodiodes grown as digital alloys on InP substrates. DRC 2020: 1-2 - Chih-Pin Lin, Hao-Hua Hsu, Tuo-Hung Hou:
Phase and Carrier Polarity Control of Sputtered MoTe2 by Plasma-induced Defect Engineering. DRC 2020: 1-2 - Wenjian Liu
, Islam Sayed, Brian Romanczyk, Nirupam Hatui
, Jana Georgieva, Haoran Li, Stacia Keller, Umesh K. Mishra:
Near-ideal Ru/N-polar GaN Schottky diode with ultralow reverse leakage. DRC 2020: 1-2 - Sebastian Lukas
, Satender Kataria, Maximilian Prechtl, Oliver Hartwig, Alexander Meledin
, Joachim Mayer, Daniel Neumaier, Georg S. Duesberg
, Max Christian Lemme
:
Correlation of Material Structure and Electronic Properties in 2D Platinum-Diselenide-based Devices. DRC 2020: 1-2 - Yuan-Chun Luo, Jae Hur
, Panni Wang, Asif Islam Khan, Shimeng Yu
:
Modeling Multi-states in Ferroelectric Tunnel Junction. DRC 2020: 1-2 - Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig:
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. DRC 2020: 1-2 - Jinyoung Park, Dacheng Mao, Yaowei Xie, Zheshun Xiong, Guangyu Xu:
High-Density Multilayer Graphene Microelectrode Arrays for Optogenetic Electrophysiology in Human Embryonic Kidney Cells. DRC 2020: 1-2 - Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. DRC 2020: 1-2 - Chenhao Ren, Mohamadali Malakoutian
, Siwei Li, Srabanti Chowdhury
:
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature. DRC 2020: 1-2 - Akanksha Rohit
, Yunus Kelestemur, Savas Kaya, Parthiban Rajan:
Ultra-Durable and Reliable High-k Textile Capacitors for Wearables and Robotics. DRC 2020: 1-2
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