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"High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of ..."

Kyung Eun Park, Shun'ichiro Ohmi (2020)

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DOI: 10.1109/DRC50226.2020.9135143

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-27

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Kyung Eun Park, Shun'ichiro Ohmi:
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory. DRC 2020: 1-2

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