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"2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of ..."

Aditi Agarwal, Kijeong Han, B. Jayant Baliga (2020)

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DOI: 10.1109/DRC50226.2020.9135164

access: closed

type: Conference or Workshop Paper

metadata version: 2020-07-27

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Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. DRC 2020: 1-2

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