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"Read static noise margin aging model considering SBD and BTI effects for ..."

Kolsoom Mehrabi et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.003

access: closed

type: Journal Article

metadata version: 2023-03-21

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  - https://dblp.org/rec/journals/mr/MehrabiEYAM16
Kolsoom Mehrabi, Behzad Ebrahimi, Roohollah Yarmand, Ali Afzali-Kusha, Hamid Mahmoodi:
Read static noise margin aging model considering SBD and BTI effects for FinFET SRAMs. Microelectron. Reliab. 65: 20-26 (2016)

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