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ORCIDSiyang Liu 0002
Person information
- affiliation (PhD 2015): Southeast University, National ASIC System Engineering Research Center, Nanjing, China
Other persons with the same name
- Siyang Liu — disambiguation page
- Siyang Liu 0001 — Beijing University of Posts and Telecommunications, School of Telecommunication Engineering, China
- Siyang Liu 0003 — University of Michigan, Ann Arbor, MI, USA (and 1 more)
- Siyang Liu 0004
![[0000-0002-5426-6854]](https://dblp1.uni-trier.de/img/orcid-mark.12x12.png "0000-0002-5426-6854")
— Shanghai Jiao Tong University, Department of Electronic Engineering, China
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Journal Articles
- 2022
[j6]Sheng Li, Siyang Liu, Chi Zhang, Le Qian, Shuxuan Xin, Chen Ge, Weifeng Sun:
Comparison Investigations on Unclamped-Inductive-Switching Behaviors of Power GaN Switching Devices. IEEE Trans. Ind. Electron. 69(5): 5041-5049 (2022)- 2021
- [j5]Qi Liu, Tuanzhuang Wu, Yanfeng Ma, Siyang Liu, Xiaojuan Xia, Weifeng Sun:
Novel Multiple-Layer Stack Capacitor and Its Application in the IRPFA Readout Circuit. IEEE Access 9: 161806-161813 (2021) - [j4]Siyang Liu, Xin Tong, Jiaxing Wei, Weifeng Sun, Zhuo Yang, Peng Ye, Yuanzheng Zhu:
Lightning Surge Robustness Analysis and Optimization for an LED Driver Based on a Flyback Converter. IEEE Trans. Ind. Electron. 68(11): 10449-10458 (2021) - 2014
- [j3]Chunwei Zhang, Siyang Liu, Daying Sun, Chaohui Yu, Weifeng Sun:
A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect. IEICE Electron. Express 11(6): 20140055 (2014) - 2011
- [j2]Qinsong Qian, Siyang Liu, Weifeng Sun, Hu Sun:
Threshold voltage degradation under high Vgs and low Vds on 200 V SOI power devices. Microelectron. J. 42(5): 609-613 (2011) - 2010
- [j1]Hong Wu, Qinsong Qian, Siyang Liu, Weifeng Sun, Longxing Shi:
Devices' optimization against hot-carrier degradation in high voltage pLEDMOS transistor. Microelectron. Reliab. 50(8): 1071-1076 (2010)
Conference and Workshop Papers
- 2023
- [c4]Weihao Lu, Sheng Li, Siyang Liu, Yanfeng Ma, Long Zhang, Jiaxing Wei, Weifeng Sun, Yiheng Li, Yuanyang Xia, Ke Wang, Tinggang Zhu:
Superior Performances of Dynamic On-State Resistance in 1.9kV GaN-on-Sapphire HEMT. ICTA 2023: 13-14 - 2021
- [c3]Qi Liu, Weifeng Sun, Siyang Liu:
Design of 320×256-30um DI Medium and Short Wave Two-color IRFPA Readout Circuit. ICVISP 2021: 313-317 - [c2]Jing Zhu, Ding Yan, Siyuan Yu, Weifeng Sun, Gang Shi, Siyang Liu, Sen Zhang:
33.2 A 600V GaN Active Gate Driver with Dynamic Feedback Delay Compensation Technique Achieving 22.5% Turn-On Energy Saving. ISSCC 2021: 462-464 - 2015
- [c1]Jiaxing Wei, Jianfeng Wang, Ning Wang, Siyang Liu, Weifeng Sun:
A novel stack package solution of AC-DC chip for high-power density adapters. ASICON 2015: 1-4
Coauthor Index
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