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Journal Articles
- 2022
[j25]Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki:
Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures. IEICE Trans. Electron. 105-C(10): 610-615 (2022)- [j24]Jialin Wu, Katsunori Makihara, Hai Zhang
, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki:
Magnetic-Field Dependent Electron Transport of Fe3Si Nanodots. IEICE Trans. Electron. 105-C(10): 616-621 (2022) - 2019
- [j23]Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki:
Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots. IEICE Trans. Electron. 102-C(6): 458-461 (2019) - 2017
- [j22]Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki:
Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors. IEICE Trans. Electron. 100-C(5): 468-474 (2017) - 2015
- [j21]Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki:
Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements. IEICE Trans. Electron. 98-C(5): 406-410 (2015) - 2014
- [j20]Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki:
Selective Growth of Self-Assembling Si and SiGe Quantum Dots. IEICE Trans. Electron. 97-C(5): 393-396 (2014) - [j19]Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi:
High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy. IEICE Trans. Electron. 97-C(5): 397-400 (2014) - 2013
- [j18]Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer. IEICE Trans. Electron. 96-C(5): 674-679 (2013) - [j17]Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota:
X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures. IEICE Trans. Electron. 96-C(5): 680-685 (2013) - [j16]Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki:
Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures. IEICE Trans. Electron. 96-C(5): 694-698 (2013) - [j15]Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior. IEICE Trans. Electron. 96-C(5): 702-707 (2013) - [j14]Motoki Fukusima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki:
Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System. IEICE Trans. Electron. 96-C(5): 708-713 (2013) - [j13]Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi:
Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy. IEICE Trans. Electron. 96-C(5): 718-721 (2013) - 2012
- [j12]Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering. IEICE Trans. Electron. 95-C(5): 879-884 (2012) - 2011
- [j11]Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure. IEICE Trans. Electron. 94-C(5): 699-704 (2011) - [j10]Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities. IEICE Trans. Electron. 94-C(5): 717-723 (2011) - [j9]Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh:
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor. IEICE Trans. Electron. 94-C(5): 730-736 (2011) - 2010
- [j8]Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki:
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots. IEICE Trans. Electron. 93-C(5): 569-572 (2010) - 2009
- [j7]Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki:
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories. IEICE Trans. Electron. 92-C(5): 616-619 (2009) - 2008
- [j6]Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki:
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM. IEICE Trans. Electron. 91-C(5): 712-715 (2008) - 2007
- [j5]Yanli Pei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, Seiji Inumiya, Yasuo Nara:
Evaluation of Dielectric Reliability of Ultrathin HfSiOxNy in Metal-Gate Capacitors. IEICE Trans. Electron. 90-C(5): 962-967 (2007) - 2005
- [j4]Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki:
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation. IEICE Trans. Electron. 88-C(4): 640-645 (2005) - [j3]Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate. IEICE Trans. Electron. 88-C(4): 646-650 (2005) - [j2]Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique. IEICE Trans. Electron. 88-C(4): 705-708 (2005) - [j1]Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki:
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots. IEICE Trans. Electron. 88-C(4): 709-712 (2005)
Coauthor Index
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