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ORCIDMitsuhisa Ikeda
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2010 – 2019
- 2019
[j12]Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki:
Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots. IEICE Trans. Electron. 102-C(6): 458-461 (2019)- 2017
- [j11]Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki:
Embedding of Ti Nanodots into SiOx and Its Impact on Resistance Switching Behaviors. IEICE Trans. Electron. 100-C(5): 468-474 (2017) - 2014
- [j10]Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki:
Selective Growth of Self-Assembling Si and SiGe Quantum Dots. IEICE Trans. Electron. 97-C(5): 393-396 (2014) - [j9]Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi:
High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy. IEICE Trans. Electron. 97-C(5): 397-400 (2014) - 2013
- [j8]Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki:
Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures. IEICE Trans. Electron. 96-C(5): 694-698 (2013) - [j7]Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki:
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior. IEICE Trans. Electron. 96-C(5): 702-707 (2013) - [j6]Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi:
Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy. IEICE Trans. Electron. 96-C(5): 718-721 (2013) - 2011
- [j5]Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta
, Tetsuo Endoh:
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor. IEICE Trans. Electron. 94-C(5): 730-736 (2011) - 2010
- [j4]Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki:
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots. IEICE Trans. Electron. 93-C(5): 569-572 (2010)
2000 – 2009
- 2009
- [j3]Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki:
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories. IEICE Trans. Electron. 92-C(5): 616-619 (2009) - 2008
- [j2]Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki:
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO2 Structure as Evaluated by AFM/KFM. IEICE Trans. Electron. 91-C(5): 712-715 (2008) - 2005
- [j1]Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki:
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots. IEICE Trans. Electron. 88-C(4): 709-712 (2005)
Coauthor Index
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