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Journal Articles
- 2008
[j11]Guido Groeseneken
, Ingrid De Wolf, A. J. Mouthaan, Jaap Bisschop:
Editorial. Microelectron. Reliab. 48(8-9): 1111 (2008)- 2005
- [j10]M. S. B. Sowariraj, Theo Smedes, Peter C. de Jong, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
A 3-D Circuit Model to evaluate CDM performance of ICs. Microelectron. Reliab. 45(9-11): 1425-1429 (2005) - 2003
- [j9]M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
Role of package parasitics and substrate resistance on the Charged Device Model (CDM) failure levels -An explanation and die protection strategy. Microelectron. Reliab. 43(9-11): 1569-1575 (2003) - 2002
- [j8]N. Tosic Golo, Fred G. Kuper, Ton J. Mouthaan:
Zapping thin film transistors. Microelectron. Reliab. 42(4-5): 747-765 (2002) - [j7]M. S. B. Sowariraj, Theo Smedes, Cora Salm, Ton J. Mouthaan, Fred G. Kuper:
The influence of technology variation on ggNMOSTs and SCRs against CDM BSD stress. Microelectron. Reliab. 42(9-11): 1287-1292 (2002) - [j6]H. V. Nguyen, Cora Salm, J. Vroemen, J. Voets, Benno Krabbenborg, Jaap Bisschop, A. J. Mouthaan, Fred G. Kuper:
Fast temperature cycling and electromigration induced thin film cracking in multilevel interconnection: experiments and modeling. Microelectron. Reliab. 42(9-11): 1415-1420 (2002) - [j5]H. V. Nguyen, Cora Salm, R. Wenzel, A. J. Mouthaan, Fred G. Kuper:
Simulation and experimental characterization of reservoir and via layout effects on electromigration lifetime. Microelectron. Reliab. 42(9-11): 1421-1425 (2002) - 2001
- [j4]Gianluca Boselli, Stan Meeuwsen, Ton J. Mouthaan, Fred G. Kuper:
Investigations on double-diffused MOS transistors under ESD zap conditions. Microelectron. Reliab. 41(3): 395-405 (2001) - [j3]N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. Microelectron. Reliab. 41(9-10): 1391-1396 (2001) - 1996
- [j2]Benno H. Krabbenborg, A. Bosma, Henk C. de Graaff, Ton J. Mouthaan:
Layout to circuit extraction for three-dimensional thermal-electrical circuit simulation of device structures. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 15(7): 765-774 (1996) - 1994
- [j1]Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan:
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(3): 293-302 (1994)
Conference and Workshop Papers
- 2008
- [c5]Zsófia Ruttkay, Ton J. Mouthaan:
CreaTe: A New Programme to Attract Engineers as Design Artists. DELTA 2008: 592-596 - 2006
- [c4]Ton J. Mouthaan, Anke Kohl:
Internationalisation of Masters education; globalisation at work. DELTA 2006: 113-115 - 2004
- [c3]Ton J. Mouthaan:
A Case Study of a Microsystems MSc Curriculum. DELTA 2004: 146-148 - 2003
- [c2]Ton J. Mouthaan, Wouter Olthuis, Henk Vos:
Competence-Based EE-Learning: (How) Can We Implement It? MSE 2003: 33-34 - 2002
- [c1]Ton J. Mouthaan, R. W. Brink, Henk Vos:
Competencies of BSc and MSc Programmes in Electrical Engineering and Student Portfolios. DELTA 2002: 203-208
Coauthor Index
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