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"The time-voltage trade-off for ESD damage threshold in amorphous silicon ..."

N. Tosic Golo et al. (2001)

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DOI: 10.1016/S0026-2714(01)00148-2

access: closed

type: Journal Article

metadata version: 2020-02-22

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N. Tosic Golo, S. van der Wal, Fred G. Kuper, Ton J. Mouthaan:
The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors. Microelectron. Reliab. 41(9-10): 1391-1396 (2001)

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