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Hideyuki Kikuchihara
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2020 – today
- 2021
- [j5]Abhishek Kar
, Mitiko Miura-Mattausch
, Mainak Sengupta
, Dondee Navarro
, Hideyuki Kikuchihara, Takahiro Iizuka
, Hafizur Rahaman
, Hans Jürgen Mattausch
:
Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation. IEEE Access 9: 23786-23794 (2021) - [c7]Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Takeshi Mizoguchi, Hajime Nagase, Makoto Hashimoto, Yusuke Kawaguchi, Hans Jürgen Mattausch:
Modeling of SJ-MOSFET for High-Voltage Applications with Inclusion of Carrier Dynamics during Switching. ISDCS 2021: 1-4 - [c6]Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Hans Jürgen Mattausch:
Model Development for Robust Design of SOI-MOSFET Circuits used in Radiative Environments. ISDCS 2021: 1-4 - 2020
- [c5]Soumajit Ghosh, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Hafizur Rahaman, Hans Jürgen Mattausch:
History Effect on Circuit Performance of SOI-MOSFETs. ISDCS 2020: 1-5 - [c4]Fernando Ávila Herrera, Mitiko Miura-Mattausch, Takahiro Iizuka, Hideyuki Kikuchihara, Yoko Hirano, Hans Jürgen Mattausch:
Modeling of Short-Channel Effect on Multi-Gate MOSFETs for Circuit Simulation. ISDCS 2020: 1-4
2010 – 2019
- 2019
- [j4]Arnab Mukhopadhyay
, Tapas Kumar Maiti
, Sandip Bhattacharya
, Takahiro Iizuka, Hideyuki Kikuchihara, Mitiko Miura-Mattausch, Hafizur Rahaman
, Sadayuki Yoshitomi, Dondee Navarro, Hans Jürgen Mattausch:
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs. IEICE Trans. Electron. 102-C(6): 487-494 (2019) - 2018
- [j3]Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Tapas K. Maiti
, Nezam Rohbani, Dondee Navarro, Hans Jürgen Mattausch:
Compact modeling of dynamic trap density evolution for predicting circuit-performance aging. Microelectron. Reliab. 80: 164-175 (2018) - [c3]Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Tahahiro Kajiwara, Yuta Tanimoto, Atsushi Saito, Takahiro Iizuka, Dondee Navarro, Hans Jürgen Mattausch:
Compact Modeling for Power Efficient Circuit Design. ESSDERC 2018: 234-237 - 2017
- [c2]Mitiko Miura-Mattausch, Hidenori Miyamoto, Hideyuki Kikuchihara, Dondee Navarro, Tapas K. Maiti
, Nezam Rohbani, C. Ma, Hans Jürgen Mattausch, A. Schiffmann, Alexander Steinmair, Ehrenfried Seebacher:
Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits. ESSDERC 2017: 192-195 - 2013
- [j2]Takahiro Iizuka, Kenji Fukushima, Akihiro Tanaka, Hideyuki Kikuchihara, Masataka Miyake, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation. IEICE Trans. Electron. 96-C(5): 744-751 (2013) - 2012
- [j1]Takahiro Iizuka, Takashi Sakuda, Yasunori Oritsuki, Akihiro Tanaka, Masataka Miyake, Hideyuki Kikuchihara, Uwe Feldmann, Hans Jürgen Mattausch, Mitiko Miura-Mattausch:
Compact Modeling of Expansion Effects in LDMOS. IEICE Trans. Electron. 95-C(11): 1817-1823 (2012)
1980 – 1989
- 1985
- [c1]Michiaki Muraoka, Hirokazu Iida, Hideyuki Kikuchihara, Michio Murakami, Kazuyuki Hirakawa:
ACTAS: an accurate timing analysis system for VLSI. DAC 1985: 152-158
Coauthor Index
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