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2020 – today
- 2023
[j6]Sneha Narasimhan
, Ajit Kanale, Subhashish Bhattacharya, B. Jayant Baliga:
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application. IEEE Access 11: 89277-89289 (2023)- 2021
- [j5]Ajit Kanale, B. Jayant Baliga:
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement. IEEE Access 9: 70039-70047 (2021) - 2020
- [c7]Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. DRC 2020: 1-2
2010 – 2019
- 2019
- [c6]Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. DRC 2019: 237-238 - [c5]Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. ESSDERC 2019: 78-81 - [c4]Ajit Kanale, B. Jayant Baliga:
Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation. IECON 2019: 5114-5119 - [c3]Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya:
Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. IRPS 2019: 1-6 - 2018
- [c2]B. Jayant Baliga:
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization. DRC 2018: 1-2 - 2017
- [j4]WoongJe Sung, B. Jayant Baliga:
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET). IEEE Trans. Ind. Electron. 64(10): 8206-8212 (2017) - 2016
- [c1]B. Jayant Baliga:
SiC power devices: From conception to social impact. ESSDERC 2016: 192-197
2000 – 2009
- 2001
- [j3]B. Jayant Baliga:
The future of power semiconductor device technology. Proc. IEEE 89(6): 822-832 (2001)
1990 – 1999
- 1994
- [j2]B. Jayant Baliga:
Power semiconductor devices for variable-frequency drives. Proc. IEEE 82(8): 1112-1122 (1994)
1980 – 1989
- 1988
- [j1]B. Jayant Baliga:
Evolution of MOS-bipolar power semiconductor technology. Proc. IEEE 76(4): 409-418 (1988)
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