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"Impact of Channel Length on Characteristics of 600V 4H-SiC ..."

Aditi Agarwal, Kijeong Han, B. Jayant Baliga (2019)

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DOI: 10.1109/ESSDERC.2019.8901813

access: closed

type: Conference or Workshop Paper

metadata version: 2019-11-28

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  dblp key:
  - conf/essderc/AgarwalHB19
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Aditi Agarwal, Kijeong Han, B. Jayant Baliga:
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. ESSDERC 2019: 78-81

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