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Journal Articles
- 2014
[j4]Esteve Amat
, Carmen G. Almudéver, Nivard Aymerich, Ramon Canal, Antonio Rubio:
Strategies to enhance the 3T1D-DRAM cell variability robustness beyond 22 nm. Microelectron. J. 45(10): 1342-1347 (2014)- 2013
- [j3]Esteve Amat, E. Amatllé, Sergio Gómez, Nivard Aymerich, Carmen G. Almudéver, Francesc Moll, Antonio Rubio:
Systematic and random variability analysis of two different 6T-SRAM layout topologies. Microelectron. J. 44(9): 787-793 (2013) - 2012
- [j2]Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio, Ramon Canal, Antonio González:
Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells. Integr. 45(3): 246-252 (2012) - [j1]Nivard Aymerich, Antonio Rubio:
Fault-tolerant nanoscale architecture based on linear threshold gates with redundancy. Microprocess. Microsystems 36(5): 420-426 (2012)
Conference and Workshop Papers
- 2021
- [c5]David R. Ditzel, Roger Espasa, Nivard Aymerich, Allen Baum, Tom Berg, Jim Burr, Eric Hao, Jayesh Iyer, Miquel Izquierdo, Shankar Jayaratnam, Darren Jones, Chris Klingner, Jin Kim, Stephen Lee, Marc Lupon, Grigorios Magklis, Bojan Maric, Rajib Nath, Mike Neilly, J. Duane Northcutt, Bill Orner, Jose Renau, Gerard Reves, Xavier Reves, Tom Riordan, Pedro Sanchez, Sridhar Samudrala, Guillem Sole, Raymond Tang, Tommy Thorn, Francisco Torres, Sebastia Tortella, Daniel Yau:
Accelerating ML Recommendation with over a Thousand RISC-V/Tensor Processors on Esperanto's ET-SoC-1 Chip. HCS 2021: 1-23 - 2013
- [c4]Esteve Amat, Carmen G. Almudéver, Nivard Aymerich, Antonio Rubio, Ramon Canal:
Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells. MWSCAS 2013: 81-84 - [c3]Nivard Aymerich, Antonio Rubio:
Extending the fundamental error bounds for asymmetric error reliable computation. NANOARCH 2013: 106-109 - 2011
- [c2]Nivard Aymerich, Shrikanth Ganapathy, Antonio Rubio, Ramon Canal, Antonio González:
Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells. ACM Great Lakes Symposium on VLSI 2011: 277-282 - [c1]Nivard Aymerich, A. Asenov, Andrew R. Brown, Ramon Canal, Binjie Cheng, Joan Figueras, Antonio González, Enric Herrero, S. Markov, Miguel Miranda, Peyman Pouyan, Tanausú Ramírez, Antonio Rubio, Elena I. Vatajelu, Xavier Vera, Xingsheng Wang, Paul Zuber:
New reliability mechanisms in memory design for sub-22nm technologies. IOLTS 2011: 111-114
Coauthor Index
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