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Marie-Antoinette di Forte-Poisson

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Journal Articles

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2015
[j3]
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  dblp key:
  - journals/mr/BisiSRMRCSPLGLT15
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  - https://dblp.org/rec/journals/mr/BisiSRMRCSPLGLT15
Davide Bisi, Antonio Stocco, Isabella Rossetto, Matteo Meneghini, Fabiana Rampazzo, Alessandro Chini, Fabio Soci, Alessio Pantellini, Claudio Lanzieri, Piero Gamarra, Cedric Lacam, M. Tordjman, Marie-Antoinette di Forte-Poisson, Davide De Salvador, Marco Bazzan, Gaudenzio Meneghesso, Enrico Zanoni:
Effects of buffer compensation strategies on the electrical performance and RF reliability of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1662-1666 (2015)
2014
[j2]
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Isabella Rossetto, Fabiana Rampazzo, Matteo Meneghini, Marco Silvestri, Christian Dua, Piero Gamarra, Raphael Aubry, Marie-Antoinette di Forte-Poisson, O. Patard, Sylvain L. Delage, Gaudenzio Meneghesso, Enrico Zanoni:
Influence of different carbon doping on the performance and reliability of InAlN/GaN HEMTs. Microelectron. Reliab. 54(9-10): 2248-2252 (2014)
2012
[j1]
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  - journals/mr/OstermaierLAHMAFDSPK12
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Clemens Ostermaier, Peter Lagger, Mohammed Alomari, Patrick Herfurth, David Maier, Alexander Alexewicz, Marie-Antoinette di Forte-Poisson, Sylvain L. Delage, Gottfried Strasser, Dionyz Pogany, Erhard Kohn:
Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. Microelectron. Reliab. 52(9-10): 1812-1815 (2012)

Conference and Workshop Papers

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2014
[c1]
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  - conf/essderc/RossettoRGMBZPMZDFAOD14
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Isabella Rossetto, Fabiana Rampazzo, Simone Gerardin, Matteo Meneghini, Marta Bagatin, Alberto Zanandrea, Alessandro Paccagnella, Gaudenzio Meneghesso, Enrico Zanoni, Christian Dua, Marie-Antoinette di Forte-Poisson, Raphael Aubry, Mourad Oualli, Sylvain L. Delage:
Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences. ESSDERC 2014: 381-384

Coauthor Index

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