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ORCIDLing Yang 0003
Person information
- affiliation: Xidian University, School of Advanced Materials and Nanotechnology, China
- affiliation: Xidian University, State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology, China
Other persons with the same name
- Ling Yang — disambiguation page
- Ling Yang 0001
![[0000-0002-8707-6977]](https://dblp1.uni-trier.de/img/orcid-mark.12x12.png "0000-0002-8707-6977")
— Hunan University, College of Electrical and Information Engineering, Changsha, China (and 1 more) - Ling Yang 0002 — Lanzhou University, School of Information Science and Engineering, China
- Ling Yang 0004 — Tongji University, College of Surveying and Geo-Informatics, Shanghai, China
- Ling Yang 0005 — St. John's University, Department of Marketing and Logistics Management, Taipei, Taiwan
- Ling Yang 0006 — Peking University, Beijing, China
- Ling Yang 0007 — Chinese Academy of Sciences, National Key Laboratory of Microwave Imaging, Beijing, China (and 2 more)
- Ling Yang 0008 — National University of Defense Technology, School of Computer, Changsha, China
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2020 – today
- 2025
[j8]Mao Jia, Bin Hou, Ling Yang, Meng Zhang, Mei Wu, Hao Lu, Xitong Hong, Zhiqiang Xue, Jiale Du, Qingyuan Chang, Qian Xiao, Xiaohua Ma, Yue Hao:
Gate conduction mechanisms and high Vth stability of Cu-gated p-GaN HEMT. Sci. China Inf. Sci. 68(5) (2025)- 2024
- [j7]Qing Zhu, Zhenni Wang, Yuxiang Wei, Ling Yang, Xiaoli Lu, Jiejie Zhu, Peng Zhong, Yimin Lei, Xiaohua Ma:
Realtime observation of "spring fracture" like AlGaN/GaN HEMT failure under bias. Sci. China Inf. Sci. 67(1) (2024) - [j6]Chunzhou Shi, Ling Yang, Meng Zhang, Hao Lu, Mei Wu, Bin Hou, Xuerui Niu, Qian Yu, Wenliang Liu, Wenze Gao, Xiaohua Ma, Yue Hao:
Improved RF power performance via electrostatic shielding effect using AlGaN/GaN/graded-AlGaN/GaN double-channel structure. Sci. China Inf. Sci. 67(4) (2024) - [j5]Qingyuan Chang, Bin Hou, Ling Yang, Mei Wu, Meng Zhang, Hao Lu, Fuchun Jia, Xuerui Niu, Chunzhou Shi, Jiale Du, Mao Jia, Qian Yu, Shiming Li, Youjun Zhu, Xiaohua Ma, Yue Hao:
High-voltage quasi-vertical GaN-on-Si Schottky barrier diode with edge termination structure of optimized multi-level N ion implantation. Sci. China Inf. Sci. 67(12) (2024) - 2022
- [j4]Siyu Liu, Xiaohua Ma, Jiejie Zhu, Minhan Mi, Jingshu Guo, Jielong Liu, Yilin Chen, Qing Zhu, Ling Yang, Yue Hao:
Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. Sci. China Inf. Sci. 65(10) (2022) - [j3]Yuchen Wang, Xiaohua Ma, Yang Lu, Bochao Zhao, Ziyue Zhao, Chupeng Yi, Ling Yang, Jiangyi Shi, Yue Hao:
A Broadband Amplifier With Flat Bandwidth for Modulator and Measurement Driver Circuits. IEEE Trans. Instrum. Meas. 71: 1-9 (2022) - [c3]Hao Lu, Likun Zhou, Longge Deng, Ling Yang, Bin Hou, Xiaohua Ma, Yue Hao:
First Demonstration of High PAE Performance Using InGaN Channel HEMT for 5G RF Applications. ICTA 2022: 30-31 - 2021
- [j2]Yue Hao, Shuiying Xiang, Genquan Han, Jincheng Zhang, Xiaohua Ma, Zhangming Zhu, Xingxing Guo, Yahui Zhang, Yanan Han, Ziwei Song, Yan Liu, Ling Yang, Hong Zhou, Jiangyi Shi, Wei Zhang, Min Xu, Weisheng Zhao, Biao Pan, Yangqi Huang, Qi Liu, Yimao Cai, Jian Zhu, Xin Ou, Tiangui You, Huaqiang Wu, Bin Gao, Zhiyong Zhang, Guoping Guo, Yonghua Chen, Yong Liu, Xiangfei Chen, Chunlai Xue, Xingjun Wang, Lixia Zhao, Xihua Zou, Lianshan Yan, Ming Li:
Recent progress of integrated circuits and optoelectronic chips. Sci. China Inf. Sci. 64(10) (2021) - [c2]Hao Lu, Xiaohua Ma, Bin Hou, Ling Yang, Teng Huo, Zeyan Si, Yue Hao:
Novel Selective Area Recessed Regrowth-free Ohmic Contacts to High Al-content Barrier. ICTA 2021: 78-79 - 2020
- [j1]Qing Zhu, Xiaohua Ma, Bin Hou, Mei Wu, Jiejie Zhu, Ling Yang, Meng Zhang, Yue Hao:
Investigation of Inverse Piezoelectric Effect and Trap Effect in AlGaN/GaN HEMTs Under Reverse-Bias Step Stress at Cryogenic Temperature. IEEE Access 8: 35520-35528 (2020) - no results
2010 – 2019
- 2018
- [c1]Jiejie Zhu, Bin Hou, Lixiang Chen, Qing Zhu, Ling Yang, Xiaowei Zhou, Peng Zhang, Xiaohua Ma, Yue Hao:
Threshold voltage shift and interface/border trapping mechanism in Al2O3/AlGaN/GaN MOS-HEMTs. IRPS 2018: 1 - no results
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