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2020 – today
- 2024
[c7]Oleksii Zinchenko, Simon Mendy, Xiaoyun Rong, Kyrylo Melnyk, Amr Saleh, Olayiwola Alatise, Philip Mawby, Mohamed Taha:
A Virtual Platform for EV Drivetrain Testing Based on Low-Power Hardware in the Loop System. ICIT 2024: 1-7- 2022
- [j8]Hai Ren
, Li Liu, Sinisa Djurovic, Li Ran, Xianming Liu, Hao Feng, Philip Mawby:
In Situ Contact Pressure Monitoring of Press Pack Power Module Using FBG Sensors. IEEE Trans. Instrum. Meas. 71: 1-11 (2022) - 2021
- [c6]Amel Lachichi, Phil Mawby:
Bipolar Degradation monitoring of 4H-SiC MOSFET Power Devices by Electroluminescence Measurements. IECON 2021: 1-5 - 2020
- [c5]Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Phil Mawby:
Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs. IRPS 2020: 1-10
2010 – 2019
- 2017
- [j7]Jose Angel Ortiz Gonzalez, Olayiwola Alatise, Attahir Murtala Aliyu, Pushparajah Rajaguru, Alberto Castellazzi, Li Ran, Philip Mawby, Chris Bailey:
Evaluation of SiC Schottky Diodes Using Pressure Contacts. IEEE Trans. Ind. Electron. 64(10): 8213-8223 (2017) - 2016
- [j6]Jose Angel Ortiz Gonzalez, Attahir Murtala Aliyu, Olayiwola Alatise, Alberto Castellazzi, Li Ran, Phil Mawby:
Development and characterisation of pressed packaging solutions for high-temperature high-reliability SiC power modules. Microelectron. Reliab. 64: 434-439 (2016) - [j5]Saeed Jahdi, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Li Ran, Philip Mawby:
Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules. IEEE Trans. Ind. Electron. 63(2): 849-863 (2016) - [j4]Ji Hu, Olayiwola Alatise, Jose Angel Ortiz Gonzalez, Roozbeh Bonyadi, Petros Alexakis, Li Ran, Philip Mawby:
Robustness and Balancing of Parallel-Connected Power Devices: SiC Versus CoolMOS. IEEE Trans. Ind. Electron. 63(4): 2092-2102 (2016) - 2015
- [j3]Saeed Jahdi, Olayiwola Alatise, Petros Alexakis, Li Ran, Philip Mawby:
The Impact of Temperature and Switching Rate on the Dynamic Characteristics of Silicon Carbide Schottky Barrier Diodes and MOSFETs. IEEE Trans. Ind. Electron. 62(1): 163-171 (2015) - [j2]Saeed Jahdi, Olayiwola Alatise, Li Ran, Philip Mawby:
Accurate Analytical Modeling for Switching Energy of PiN Diodes Reverse Recovery. IEEE Trans. Ind. Electron. 62(3): 1461-1470 (2015) - 2013
- [c4]Saeed Jahdi, Olayiwola Alatise, Phil Mawby:
The impact of silicon carbide technology on grid-connected Distributed Energy resources. ISGT Europe 2013: 1-5 - 2011
- [c3]Olayiwola Alatise, Nii-Allotey Adotei, Phil Mawby:
Super-junction trench MOSFETs for improved energy conversion efficiency. ISGT Europe 2011: 1-5 - [c2]Nii-Adotei Parker-Allotey, Olayiwola Alatise, Dean Hamilton, Michael R. Jennings, Phil Mawby, Rob Nash, Rob Magill:
Conduction and switching loss comparison between an IGBT/Si-PiN diode pair and an IGBT/SiC-Schottky diode pair. ISGT Europe 2011: 1-6
2000 – 2009
- 2008
- [c1]Ian R. Swan, Angus T. Bryant, Philip Mawby:
Fast Thermal Models for Power Device Packaging. IAS 2008: 1-8 - 2007
- [j1]Amador Pérez-Tomás, Michael R. Jennings, M. Davis, Vishal Shah, T. Grasby, James Anthony Covington, Philip A. Mawby:
High doped MBE Si p-n and n-n heterojunction diodes on 4H-SiC. Microelectron. J. 38(12): 1233-1237 (2007)
Coauthor Index
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