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Update May 7, 2017: Please note that we had to disable the phrase search operator (.) and the boolean not operator (-) due to technical problems. For the time being, phrase search queries will yield regular prefix search result, and search terms preceded by a minus will be interpreted as regular (positive) search terms.

found 37 matches

• 2015
• 
  Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Zhong-Zhen Yu, Rongshan Wei:
  Graphene oxide and TiO2 nano-particle composite based nonvolatile memory. NVMTS 2015: 1-4
• 
  Xiaorong Chen, Jie Feng, Haili Ma:
  The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation. NVMTS 2015: 1-5
• 
  Yu-Hsuan Chen, Jr-Jie Tsai, Yan-Xiang Luo, Chun-Hsing Shih:
  Iterative programming analysis of dopant-segregated multibit/cell Schottky barrier charge-trapping memories. NVMTS 2015: 1-3
• 
  Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li:
  Origin of high data retention for Ge1Cu2Te3 phase-change memory. NVMTS 2015: 1-4
• 
  Chong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song:
  Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory. NVMTS 2015: 1-3
• 
  Lei Deng, Dong Wang, Guoqi Li, Ziyang Zhang, Jing Pei:
  A new computing rule for neuromorphic engineering. NVMTS 2015: 1-3
• 
  Yichen Fang, Yimao Cai, Zongwei Wang, Zhizhen Yu, Xue Yang, Ru Huang:
  Influence of selector-introduced compliance current on HfOx RRAM switching operation. NVMTS 2015: 1-3
• 
  Alessandro Grossi, Cristian Zambelli, Piero Olivo, Jérémy Alvarez-Herault, Ken Mackay:
  Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions. NVMTS 2015: 1-4
• 
  Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto, Hiromitsu Kimura, Takaaki Fuchikami, Kyoji Marumoto, Yoshikazu Fujimori:
  A ferroelectric-based non-volatile flip-flop for wearable healthcare systems. NVMTS 2015: 1-4
• 
  Xinglong Ji, Mi Zhou, Liangcai Wu, Liangliang Cao, Zhitang Song:
  Understanding the crystallization mechanism of Ge-Te-Ti phase change material. NVMTS 2015: 1-4
• 
  H. Kazama, Takayuki Kawahara:
  STT-RAM read stability in DRAM operating region. NVMTS 2015: 1-4
• 
  Pankaj Kumbhare, Indranil Chakraborty, A. K. Singh, S. Chouhan, Neeraj Panwar, Udayan Ganguly:
  A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism. NVMTS 2015: 1-3
• 
  Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal:
  SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures. NVMTS 2015: 1-4
• 
  Hongmin Li, Jing Pei, Guoqi Li:
  Real-time tracking based on neuromrophic vision. NVMTS 2015: 1-7
• 
  Xinyi Li, Huaqiang Wu, Ning Deng, He Qian:
  1S1R device with self-compliance property for high density cross-point memory applications. NVMTS 2015: 1-3
• 
  Cong Li, Shunqiang Xu, Yaling Chen, Jiancheng Li, Zhenjiang Sun:
  An enhanced erase mechanism for single poly embedded flash memory. NVMTS 2015: 1-4
• 
  X. J. Li, Fei Zeng, J. T. Zhang, Y. D. Hu, W. S. Dong, S. H. Lu, A. Liu:
  Influence of ionic size to the pulse responses of semiconducting polymer/electrolyte hetero-junctions. NVMTS 2015: 1-4
• 
  Beiye Liu, Xiaoxiao Liu, Chenchen Liu, Wei Wen, M. Meng, Hai Li, Yiran Chen:
  Hardware acceleration for neuromorphic computing: An evolving view. NVMTS 2015: 1-4
• 
  Wenqiang Luo, Fang-Yuan Yuan, Huaqiang Wu, Liyang Pan, Ning Deng, Fei Zeng, Rongshan Wei, Xuanjing Cai:
  Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT: PSS/Ta memristor. NVMTS 2015: 1-4
• 
  Yanjun Ma, Yue Li, Edwin C. Kan, Jehoshua Bruck:
  Reliability and hardware implementation of rank modulation flash memory. NVMTS 2015: 1-5
• 
  Yanjun Ma:
  Nonvolatile multibit SRAM, bit level caching, and multi-context computing for IoT. NVMTS 2015: 1-3
• 
  Xiangchao Ma, Huaqiang Wu, Dong Wu, He Qian:
  A 16 Mb RRAM test chip based on analog power system with tunable write pulses. NVMTS 2015: 1-3
• 
  Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
  SOT-MRAM based on 1Transistor-1MTJ-cell structure. NVMTS 2015: 1-4
• 
  Tingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao:
  Nonvolatile radiation hardened DICE latch. NVMTS 2015: 1-4
• 
  Thomas P. Parnell, Nikolaos Papandreou, Thomas Mittelholzer, Haralampos Pozidis:
  Performance of cell-to-cell interference mitigation in 1y-nm MLC flash memory. NVMTS 2015: 1-4
• 
  Manan Suri, Vivek Parmar, Ashwani Kumar, Damien Querlioz, Fabien Alibart:
  Neuromorphic hybrid RRAM-CMOS RBM architecture. NVMTS 2015: 1-6
• 
  Frank Zhigang Wang, Leon O. Chua, Na Helian:
  Memristor-based random access memory: The delayed switching effect could revolutionize memory design. NVMTS 2015: 1-8
• 
  Dong Wang, Lei Deng, Pei Tang, Cheng Ma, Jing Pei:
  FPGA-based neuromorphic computing system with a scalable routing network. NVMTS 2015: 1-4
• 
  Mingqing Wang, Ning Deng, Huaqiang Wu, Qian He:
  Theory study and implementation of configurable ECC on RRAM memory. NVMTS 2015: 1-3
• 
  Shikai Wang, Cheng Ma, Dong Wang, Jing Pei:
  Extensible neuromorphic computing simulator based on a programmable hardware. NVMTS 2015: 1-3

skipping 7 more matches