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"Precursor Parameter Identification for Insulated Gate Bipolar Transistor ..."

Nishad Patil et al. (2009)

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DOI: 10.1109/TR.2009.2020134

access: closed

type: Journal Article

metadata version: 2020-07-09

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Nishad Patil, Jose Celaya, Diganta Das, Kai Goebel, Michael G. Pecht:
Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics. IEEE Trans. Reliab. 58(2): 271-276 (2009)

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