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"Reliable Physical Unclonable Functions Using Data Retention Voltage of ..."

Xiaolin Xu et al. (2015)

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DOI: 10.1109/TCAD.2015.2418288

access: closed

type: Journal Article

metadata version: 2021-10-14

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Xiaolin Xu, Amir Rahmati, Daniel E. Holcomb, Kevin Fu, Wayne P. Burleson:
Reliable Physical Unclonable Functions Using Data Retention Voltage of SRAM Cells. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 34(6): 903-914 (2015)

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