Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"Influences of silicon-rich shallow trench isolation on total ionizing dose ..."

Lei Song et al. (2017)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2017.05.007

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/SongHZLDZZ17
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/SongHZLDZZ17
Lei Song, Zhiyuan Hu, Mengying Zhang, Xiaonian Liu, Lihua Dai, Zhengxuan Zhang, Shichang Zou:
Influences of silicon-rich shallow trench isolation on total ionizing dose hardening and gate oxide integrity in a 130 nm partially depleted SOI CMOS technology. Microelectron. Reliab. 74: 1-8 (2017)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.