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"Nb-doped Ga2O3 as charge-trapping layer for ..."

R. P. Shi et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.07.148

access: closed

type: Journal Article

metadata version: 2023-10-02

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R. P. Shi, X. D. Huang, Johnny K. O. Sin, Pui-To Lai:
Nb-doped Ga₂O₃ as charge-trapping layer for nonvolatile memory applications. Microelectron. Reliab. 65: 64-68 (2016)

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