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"Gate voltage and oxide thickness dependence of progressive wear-out of ..."

T. Pompl et al. (2006)

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DOI: 10.1016/J.MICROREL.2006.07.042

access: closed

type: Journal Article

metadata version: 2020-10-09

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T. Pompl, A. Kerber, M. Röhner, Martin Kerber:
Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides. Microelectron. Reliab. 46(9-11): 1603-1607 (2006)

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