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"Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm ..."

D. Pic, Didier Goguenheim, Jean-Luc Ogier (2008)

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DOI: 10.1016/J.MICROREL.2007.08.006

access: closed

type: Journal Article

metadata version: 2020-02-22

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D. Pic, Didier Goguenheim, Jean-Luc Ogier:
Assessment of temperature and voltage accelerating factors for 2.3-3.2 nm SiO₂ thin oxides stressed to hard breakdown. Microelectron. Reliab. 48(3): 335-341 (2008)

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