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"Reliability studies on GaN HEMTs with sputtered Iridium gate module."

Richard Lossy, Hervé Blanck, Joachim Würfl (2012)

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DOI: 10.1016/J.MICROREL.2012.06.154

access: closed

type: Journal Article

metadata version: 2020-02-22

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  - https://dblp.org/rec/journals/mr/LossyBW12
Richard Lossy, Hervé Blanck, Joachim Würfl:
Reliability studies on GaN HEMTs with sputtered Iridium gate module. Microelectron. Reliab. 52(9-10): 2144-2148 (2012)

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