Stop the war!

Остановите войну!

for scientists:

default search action

combined dblp search
author search
venue search
publication search

ask others

"High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using ..."

Chao-Wei Lin et al. (2011)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2010.08.009

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/LinCLF11
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/LinCLF11
Chao-Wei Lin, Hsien-Chin Chiu, Che-Kai Lin, Jeffrey S. Fu:
High-k praseodymium oxide passivated AlGaN/GaN MOSFETs using P₂S₅/(NH₄)₂S_X + UV interface treatment. Microelectron. Reliab. 51(2): 381-385 (2011)

a service of

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.