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"Effects of Ti content and wet-N2 anneal on Ge MOS capacitors ..."

C. X. Li et al. (2008)

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DOI: 10.1016/J.MICROREL.2007.11.004

access: closed

type: Journal Article

metadata version: 2023-10-02

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C. X. Li, X. Zou, Pui-To Lai, Jing-Ping Xu, C. L. Chan:
Effects of Ti content and wet-N₂ anneal on Ge MOS capacitors with HfTiO gate dielectric. Microelectron. Reliab. 48(4): 526-530 (2008)

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