"Suppression of Ge-O and Ge-N bonding at Ge-HfO2 and ..."

S. Lee et al. (2008)

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DOI: 10.1016/J.MICROREL.2007.07.068

access: closed

type: Journal Article

metadata version: 2020-02-22

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S. Lee, J. P. Long, Gerald Lucovsky, J. L. Whitten, H. Seo, J. Lüning:
Suppression of Ge-O and Ge-N bonding at Ge-HfO₂ and Ge-TiO₂ interfaces by deposition onto plasma-nitrided passivated Ge substrates: Integration issues Ge gate stacks into advanced devices. Microelectron. Reliab. 48(3): 364-369 (2008)

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