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"Matching degradation of threshold voltage and gate voltage of NMOSFET ..."

Y. Joly et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.07.027

access: closed

type: Journal Article

metadata version: 2021-12-24

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Y. Joly, Laurent Lopez, Jean-Michel Portal, Hassen Aziza, Jean-Luc Ogier, Y. Bert, Franck Julien, Pascal Fornara:
Matching degradation of threshold voltage and gate voltage of NMOSFET after Hot Carrier Injection stress. Microelectron. Reliab. 51(9-11): 1561-1563 (2011)

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